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Probing of Ag-based Resistive Switching on the Nanoscale

Published online by Cambridge University Press:  12 October 2011

A. Geresdi ,
A. Halbritter ,
E. Szilágyi  and
G. Mihály
A. Geresdi
Affiliation:
Department of Physics, Budapest University of Technology and Economics and Condensed Matter Research Group of the Hungarian Academy of Sciences, 1111 Budapest, Budafoki út 8., Hungary
A. Halbritter
Affiliation:
Department of Physics, Budapest University of Technology and Economics and Condensed Matter Research Group of the Hungarian Academy of Sciences, 1111 Budapest, Budafoki út 8., Hungary
E. Szilágyi
Affiliation:
KFKI Research Institute for Particle and Nuclear Physics, P.O. Box 49, H-1525 Budapest, Hungary
G. Mihály
Affiliation:
Department of Physics, Budapest University of Technology and Economics and Condensed Matter Research Group of the Hungarian Academy of Sciences, 1111 Budapest, Budafoki út 8., Hungary
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Abstract

We study the switching characteristics of nanoscale junctions between a metallic tip and a silver film covered by a thin Ag2S ionic conductor layer. Resistive switching phenomena are studied on samples of various Ag2S layer thicknesses. Metallic and semiconductor behavior are distinguished by current-voltage characteristics measured at room temperature and at 4.2 K.

Keywords

ionic conductormemoryAg
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1331: Symposium K – Frontiers of Solid-State Ionics , 2011 , mrss11-1331-k01-07
Copyright
Copyright © Materials Research Society 2011

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References

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