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Probing Effects of Etching Plasmas on the Properties of PorousLow-k Dielectrics

Published online by Cambridge University Press:  17 March 2011

L. Wang ,
J. Liu ,
W.D. Wang ,
D.Z. Chi ,
D. W. Gidley  and
A. F. Yee
L. Wang
Affiliation:
Institute of Materials Research & Engineering, 3 Research Link, Singapore 117602
J. Liu
Affiliation:
Institute of Materials Research & Engineering, 3 Research Link, Singapore 117602
W.D. Wang
Affiliation:
Institute of Materials Research & Engineering, 3 Research Link, Singapore 117602
D.Z. Chi
Affiliation:
Institute of Materials Research & Engineering, 3 Research Link, Singapore 117602
D. W. Gidley
Affiliation:
Department of Physics, University of Michigan, Ann Arbor, Michigan 48109
A. F. Yee
Affiliation:
Department of Chemical Engineering & Materials Science, University of California, Irvine, CA 92697-2800
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Abstract

The application of porous low-k interlayer dielectrics is needed forreducing the parasitical capacitance, especially at 65-nm node and beyond.The understanding of process-induced modifications to material properties iscrucial for a successful integration of these low-k dielectrics. The dryetching processes of porous low-k materials are important modules in ULSIfabrication. In this study, the interaction between MSQ-based JSR LKD-5109films (shown by PALS to have interconnected 2.8 nm size pores) with CF4/O2 plasma has been investigated. Various ratios of O2 content were designed to characterize its effects on theetch rate, formation of polymerization layer, and properties of the LKD-5109film. Composition analysis was conducted by SIMS and FTIR. Moistureabsorption and fluorine diffusion into low-k films after etch process areobserved, along with carbon depletion near the surface region. The influenceof etching chemistries on the morphological characteristics of thin Tabarrier layers (8-nm in thickness) deposited on etched low-k films werefurther investigated by SEM, and it is found that oxygen concentration hassignificant influences on the morphological characteristics of thin Tabarriers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 812: Symposium F – Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics-2004 , 2004 , F6.5
Copyright
Copyright © Materials Research Society 2004

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