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Preparation, Structure and Properties of VOx and TiO2 Thin Films By Mocvd
Published online by Cambridge University Press: 21 February 2011
Abstract
Titanium and vanadium oxide thin films have been prepared in a cold wall low pressure MOCVD system for the study of MOCVD processing of epitaxial oxide films. Films were deposited on Si(111) and sapphire (0001) and (1120) at temperatures from 400 to 800°C. Processing parameter-structureproperty relationship was examined in detail and the result is presented.
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- Copyright © Materials Research Society 1990
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