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Preparation of ZnO:Mo Thin Films by RF Sputtering

Published online by Cambridge University Press:  18 March 2013

Tien-Chai Lin ,
Shang-Chou Chang ,
Wen-Chang Huang  and
Wen-Feng Huang
Tien-Chai Lin
Affiliation:
Department of Electrical Engineering, Kun Shan University, No. 949, Da Wan Road, Yung-Kang District, Tainan, 71003, Taiwan, ROC
Shang-Chou Chang
Affiliation:
Department of Electrical Engineering, Kun Shan University, No. 949, Da Wan Road, Yung-Kang District, Tainan, 71003, Taiwan, ROC
Wen-Chang Huang*
Affiliation:
Department of Electro-Optical Engineering, Kun Shan University, No. 949, Da Wan Road, Yung-Kang District, Tainan, 71003, Taiwan, ROC
Wen-Feng Huang
Affiliation:
Department of Electrical Engineering, Kun Shan University, No. 949, Da Wan Road, Yung-Kang District, Tainan, 71003, Taiwan, ROC
*
*Corresponding author: email: [email protected]
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Abstract

Based on the electron configurations of Mo and Zn, the valence electron difference between Mo6+ and Zn2+ is 4. Therefore, a small amount of Mo doping can produce sufficient free carriers to reduce the ion scattering effects. The Mo doped ZnO (MZO) thin film prepared by RF sputtering was studied in this research. Structural, electrical, and optical characteristics of the films were discussed. The MZO film shows a resistivity of 1.1 × 10-2 Ω⋅cm, a carrier concentration of 2.2 × 1021 cm-3,a mobility of 0.63 cm2/V⋅s, and average transparency of 81.0% at both the powers of 20 W to the Mo target and of 125 W to the ZnO target. The MZO film becomes a stable p-type semiconductor at high power process toward Mo target. The film preserves its p-type characteristics after exposure to air for one and a half months. The crystal structure of the p-ZnO films is amorphous with an average transparency of 34.5%.

Keywords

x-ray diffraction (XRD)transparent conductorMo
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1494: Symposium Z – Oxide Semiconductors and Thin Films , 2013 , pp. 99 - 104
Copyright
Copyright © Materials Research Society 2013 

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References

REFERENCES

Minami, T., Mater. Res. Bull. 25, 38 (2000).CrossRefGoogle Scholar
Kobayashi, A., Sankey, O.F., Dow, J.D., Phys. Rev. B 28, 946 (1983) 946.CrossRefGoogle Scholar
Lokhande, B.J., Patil, P.S., Uplane, M.D., Phys. B 59, 306 (2001).Google Scholar
Kim, H., Gilmore, C.M., Horwitz, J.S., Pique, A., Murata, H., Kushto, G.P., Appl. Phys. Lett. 76, 259 (2000).CrossRefGoogle Scholar
Kwak, D.J., Park, K., Kim, B.S., Lee, S.H., Lee, S.J., Lim, D.G., J. Korean Phys. Soc. 45, 206 (2004).Google Scholar
Hwang, J.Y., Cho, C.R., J. Korean Phys. Soc. 47, S288 (2005).Google Scholar
Kim, H.K., Huh, S.H., Park, J.W., Jeong, J.W., Lee, G.H., Chem. Phys. Lett. 354, 165 (2002).CrossRefGoogle Scholar
Xiu, X., Cao, Y., Pang, Z., Han, S., J. Mater. Sci. Technol., 25, 785 (2009).Google Scholar
Lin, Y.C., Wang, B.L., Yen, W.T., Ha, C.T., Peng, Chris, Thin Solid Films 518, 4928 (2010).CrossRefGoogle Scholar
Dimova-Malinovska, D., Tzenov, N., Tzolov, M., Vassilev, L., Mater. Sci. Eng. B52,59 (1998).CrossRefGoogle Scholar
Sun, Y., Guo, G., Tao, D., Wang, Z., J. Phys. Chem. Solids, 68, 373(2007).CrossRefGoogle Scholar
Yamamoto, T., Yoshida, H.K., Physica B 302/303, 155 (2001).CrossRefGoogle Scholar
Mandel, G., Phys. Rev. A 134, 1037(1964).Google Scholar
Wang, C., Ji, Z., Liu, K., Xiang, Y., Ye, Z., J. Cryst. Growth 259, 279 (2003).CrossRefGoogle Scholar
Park, C.H., Zhang, S.B., Wei, S.H., Phys. Rev. B: Condens. Matter. Mater. Phys. 66, 073202(2002).CrossRefGoogle Scholar