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Preparation of Zinc Oxide Films by Low-Pressure Chemical Vapor Deposition Method

Published online by Cambridge University Press:  15 February 2011

Junichi Nishino ,
Shigeo Ohshio  and
Kiichiro Kamata
Junichi Nishino
Affiliation:
Department of Chemistry, Nagaoka University of Technology, Nagaoka, Niigata, 940–21, Japan
Shigeo Ohshio
Affiliation:
Department of Chemistry, Nagaoka University of Technology, Nagaoka, Niigata, 940–21, Japan
Kiichiro Kamata
Affiliation:
Department of Chemistry, Nagaoka University of Technology, Nagaoka, Niigata, 940–21, Japan
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Abstract

ZnO and Al-doped ZnO films prepared using a low-pressure chemical vapor deposition (LP-CVD) method were studied. The films were prepared on fused quartz substrates using bis(2,4-pentanedionato)zinc and tris(2,4-pentanedionato)aluminum which are inexpensive and stable source materials. The highly c-axis oriented ZnO films were grown on the substrates above 500°C. The minimum electrical resistivity of ρ=6.5×10−5Ωm was obtained for the ZnO film, and of ρ = 3.5×10−5Ωm was obtained for the ZnO:Al film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 363 , 1994 , 219
Copyright
Copyright © Materials Research Society 1995

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