Hostname: page-component-586b7cd67f-r5fsc Total loading time: 0 Render date: 2024-11-25T18:23:29.920Z Has data issue: false hasContentIssue false
  • English
  • Français

Preparation of WSi2 by RTA Annealing of CVD-W thin Films

Published online by Cambridge University Press:  15 February 2011

K. A. Gesheva ,
G. I. Stoyanov ,
D. S. Gogova  and
G. D. Beshkov
K. A. Gesheva
Affiliation:
Central Laboratory of Solar Energy and New Energy Sources at Bulgarian Academy of Sciences, Blvd.“Tzarigradsko shosse”72, 1784 Sofia, Bulgaria
G. I. Stoyanov
Affiliation:
Central Laboratory of Solar Energy and New Energy Sources at Bulgarian Academy of Sciences, Blvd.“Tzarigradsko shosse”72, 1784 Sofia, Bulgaria
D. S. Gogova
Affiliation:
Central Laboratory of Solar Energy and New Energy Sources at Bulgarian Academy of Sciences, Blvd.“Tzarigradsko shosse”72, 1784 Sofia, Bulgaria
G. D. Beshkov
Affiliation:
Institute of Solid State Physics at Bulgarian Academy of Sciences, Blvd.“Tzarigradsko shosse”72, 1784 Sofia, Bulgaria
Get access

Abstract

Wsi2 films were prepared by rapid thermal annealing (RTA) in the temperature range of 800 -1400 °C for time durations of 15 sec -3 minutes. In some of the treatment experiments different gases were involved and a conclusion is made about the role of hydrogen favoring Wsi crystal phase growing at 800 °C. W films with thichnesses in the range 200 Å - 1000 Å were deposited on monocrystalline Si by pyrolitical decomposition of W(CO)6 in CVD reactor at atmospheric pressure and argon atmosphere. Reflection High Energy Electron Diffraction (RHEED) and Scanning Electron Microscopy (SEM) technics were used for structural characterization and FPP-100 device for resistance measurements. Results show that by solid state reaction applied at different RTA processes WSi2 phase could be formed.Resistivities as low as 2-3 mΩ.cm are obtained for 800 -1000 °C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 402: Symposium H – Silicide Thin Films-Fabrication, Properties and Applications , 1995 , 637
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Nicolet, M.-A. and Lau, S.S., in:VLSI Electronics Microstructure Science(Acad.Press, N.Y. 1983), p.328 Google Scholar
2. Heurle, F.M.d, VLSI Science and Technology Eds. Oca, C. Dell and Bullis, W.M. (Electrochem. Soc., Pennington, N.Y. 1982)p. 194 Google Scholar
3. Gas, P. and Eurle, F.M.D, Applied Surface Science 73 (1993) 153–161 Google Scholar
4. Thomas, O., Scilla, G., Gas, P., Cotte, J., Joski, R.V., Bakli, M., Goltze, G. and Heurle, F.M.d, Appl. Surf. Sce 53 (1991) 165.Google Scholar
5. Stains, C., Thomas, O., Gas, P., Charai, A., LeGoues, F.K., Cotte, J. and Heurle, F.M.d, J.Vac.Sci. Technol. A1O (1992)907.Google Scholar
6. Gesheva, K.A., Abrosimova, V. and Beshkov, G.D., J.de Phis. IV, suppl. J.de Phis. II, Vol.1, 1991, 865–871 Google Scholar