Hostname: page-component-586b7cd67f-tf8b9 Total loading time: 0 Render date: 2024-11-23T12:04:48.085Z Has data issue: false hasContentIssue false
  • English
  • Français

Preparation of the CrO2 thin films using a Cr8O21 precursor

Published online by Cambridge University Press:  02 February 2011

Y. Muraoka ,
K. Iwai ,
S. Yoshida ,
T. Wakita ,
M. Hirai ,
T. Yokoya ,
Y. Kato ,
T. Muro  and
Y. Tamenori
Y. Muraoka
Affiliation:
Graduate School of Natural Science and Technology, Okayama University, 3-1-1 Tsushima-naka, Kita-ku, Okayama 700-8530, Japan Faculty of Science, Research Laboratory for Surface Science, Okayama University, 3-1-1 Tsushima-naka, Kita-ku, Okayama 700-8530, Japan
K. Iwai
Affiliation:
Graduate School of Natural Science and Technology, Okayama University, 3-1-1 Tsushima-naka, Kita-ku, Okayama 700-8530, Japan
S. Yoshida
Affiliation:
Graduate School of Natural Science and Technology, Okayama University, 3-1-1 Tsushima-naka, Kita-ku, Okayama 700-8530, Japan
T. Wakita
Affiliation:
Graduate School of Natural Science and Technology, Okayama University, 3-1-1 Tsushima-naka, Kita-ku, Okayama 700-8530, Japan
M. Hirai
Affiliation:
Graduate School of Natural Science and Technology, Okayama University, 3-1-1 Tsushima-naka, Kita-ku, Okayama 700-8530, Japan Faculty of Science, Research Laboratory for Surface Science, Okayama University, 3-1-1 Tsushima-naka, Kita-ku, Okayama 700-8530, Japan
T. Yokoya
Affiliation:
Graduate School of Natural Science and Technology, Okayama University, 3-1-1 Tsushima-naka, Kita-ku, Okayama 700-8530, Japan Faculty of Science, Research Laboratory for Surface Science, Okayama University, 3-1-1 Tsushima-naka, Kita-ku, Okayama 700-8530, Japan
Y. Kato
Affiliation:
Japan Synchrotron Radiation Research Institute (JASRI)/SPring-8, 1-1-1 Kouto, Sayo, Hyogo, 679-5148, Japan
T. Muro
Affiliation:
Japan Synchrotron Radiation Research Institute (JASRI)/SPring-8, 1-1-1 Kouto, Sayo, Hyogo, 679-5148, Japan
Y. Tamenori
Affiliation:
Japan Synchrotron Radiation Research Institute (JASRI)/SPring-8, 1-1-1 Kouto, Sayo, Hyogo, 679-5148, Japan
Get access

Abstract

We have prepared a CrO2 thin film by chemical vapor deposition from a Cr8O21 precursor and studied the bulk and surface physical properties. The CrO2 thin film is grown on TiO2(100) substrate by heating precursor and TiO2 (100) substrate together in a sealed quartz tube. The prepared film is found from x-ray diffraction analysis to be an (100)-oriented single phase. The magnetization and resistivity measurements indicate that the film is a ferromagnetic metal with a Curie temperature of about 400 K. Cr 3s core-level and valence band photoelectron spectroscopy spectra reveal the presence of a metallic CrO2 in the surface region of the film. Our work indicates that preparation from a Cr8O21 precursor in a closed system is promising for obtaining a CrO2 thin film with the metallic surface.

Keywords

chemical vapor deposition (CVD) (deposition)oxidefilm
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1292: Symposium K – Oxide Nanoelectronics , 2011 , mrsf10-1292-k12-22
Copyright
Copyright © Materials Research Society 2011

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Schwarz, K., J. Phys. F: Met. Phys. 16, L211 (1986).Google Scholar
2. Soulen, R. J. Jr.,Byers, J. M., Osofsky, M. S., Nadgorny, B., Ambrose, T., Cheng, S. F., Broussard, P. R., Tanaka, C. T., Nowak, J., Moodera, J. S., Barry, A., and Coey, J. M. D., Science 282, 85 (1998).Google Scholar
3. Anguelouch, A., Gupta, A., Xiao, G., Abraham, D. W., Ji, Y., Ingvarsson, S., and Chien, C. L., Phys. Rev. B 64, 180408 (2001).Google Scholar
4. Cheng, R., Xu, B., Borca, C. N., Sokolov, A., Yang, C.–S., Yuan, L., Liou, S.–H., Doudin, B., and Dowben, P. A., Appl. Phys. Lett. 79, 3122 (2001).Google Scholar
5. Ivanov, P. G., Watts, S. M., and Lind, D. M., J. Appl. Phys. 89, 1035 (2001).Google Scholar
6. Ivanov, P. G., and Bussmann, K. M., J. Appl. Phys. 105, 07B107 (2009).Google Scholar
7. Li, X. W., Gupta, A., McGuire, T. R., Duncombe, P. R., and Xiao, G., Appl. Phys. Lett. 85, 5585 (1999).Google Scholar
8. Stampe, P. A., Kennedy, R. J., Watts, S. M., and Molnár, S. V., J. Appl. Phys. 89, 7696 (2001).Google Scholar
9. Zimmermann, R., Steiner, P., Claessen, R., Reinert, F., Hüfner, S., Blaha, P., and Dufek, P., J. Phys.: Condens. Matter 11, 1657 (1999).Google Scholar
10. Hüfner, S., Photoelectron Spectroscopy, Springer, Berlin, 2003.Google Scholar
11. Zimmermann, R., Steiner, P., Claessen, R., Reinert, F., and Hüfner, S., J. Electron. Spectrosc. Relat. Phenom. 96, 179 (1998).Google Scholar