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The Preparation of Submicron Precision Cross Sections by Dimpling With A ‘Flatting Tool’

Published online by Cambridge University Press:  10 February 2011

Helen L. Humiston
Helen L. Humiston*
Affiliation:
Materials Analysis Group, Philips Semiconductors, 811 East Arques Avenue, M/S65, Sunnyvale, CA 94088
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Abstract

The complex materials systems in VLSI devices require specialized preparation techniques for TEM microstructural analysis. For this purpose, it is desirable to obtain electron transparency in all material layers from the oxides used in dielectrics to refractory metals such as tungsten. The primary advantage of dimpling these materials is that ideal specimens are obtained for low angle ion milling. By dimpling both sides of the cross section with a padded flatting tool, a thicker specimen of 130μm at the outer rim of the 3mm disc is produced that narrows to the 125nm thickness fringes in the center. These samples do not require a copper support grid, thereby allowing for a lower milling angle of 2.5 degrees on both sides of the specimen. This technique provides a cross section that is electron transparent in all layers without the loss of oxides due to differential thinning rates of various materials at higher milling angles.

It is generally thought that precision thinning through a submicron feature is not possible on the dimpler. However, a simple step-by-step procedure for this technique will be demonstrated and discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 480: Symposium Z – Specimen Preparation for Transmission Electron Microscopy…IV , 1997 , 117
Copyright
Copyright © Materials Research Society 1997

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References

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