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Preparation of Perovskite Conductive LaNiO3 Films by Sol-Gel Techniques

Published online by Cambridge University Press:  01 February 2011

Pei-Ying Lai  and
Jen-Sue Chen
Pei-Ying Lai
Affiliation:
[email protected], National Cheng Kung University, Department of Materials Science and Engineering, No.1,Ta-Hsueh Road,Tainan,Taiwan,ROC., Tainan, N/A, 701, Taiwan, 886-6-2757575
Jen-Sue Chen
Affiliation:
[email protected], National Cheng Kung University, Department of Materials Science and Engineering, No.1,Ta-Hsueh Road,Tainan,Taiwan,ROC., Tainan, N/A, N/A, Taiwan
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Abstract

Metallic thin films of LaNiO3 (LNO) have been prepared by the sol-gel method using lanthanum nitrate [La(NO3)3·6H2O] and nickel acetate [Ni(CH3COO)2·4H2O] as raw materials. X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, and electrical measurements were used to characterize the multilayer LNO thin films. The perovskite phase appears after annealing at temperatures above 600 °C. LNO thin films are n-type metallic oxide. The lowest resistivity is 621 °Ω-cm after annealing at 600 °C, and the carrier concentration is 6.09×1022/cm3.

Keywords

sol-gelelectrical propertiescrystal
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 933: Symposium G – Science and Technology of Nonvolatile Memories , 2006 , 0933-G05-05
Copyright
Copyright © Materials Research Society 2006

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