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Preparation of Mesoporous Oxides for Mems Structures

Published online by Cambridge University Press:  17 March 2011

Jong-Ah Paik ,
Nobuaki Kitazawa ,
Shih-Kang Fan ,
Chang-Jin Kim ,
Ming C. Wu  and
Bruce Dunn
Jong-Ah Paik
Affiliation:
Dept. of Materials Science and EngineeringUniversity of California at Los Angeles, CA, USA
Nobuaki Kitazawa
Affiliation:
Dept. of Materials Science and EngineeringUniversity of California at Los Angeles, CA, USA
Shih-Kang Fan
Affiliation:
Dept.of Mechanical and Aerospace EngineeringUniversity of California at Los Angeles, CA, USA
Chang-Jin Kim
Affiliation:
Dept.of Mechanical and Aerospace EngineeringUniversity of California at Los Angeles, CA, USA
Ming C. Wu
Affiliation:
Dept. of Electrical EngineeringUniversity of California at Los Angeles, CA, USA
Bruce Dunn
Affiliation:
Dept. of Materials Science and EngineeringUniversity of California at Los Angeles, CA, USA
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Abstract

The high porosity and uniform pore size provided by mesoporous oxide films offer interesting opportunities for MEMS devices that require low density and low thermal conductivity. This paper describes recent efforts at adapting mesoporous films for MEMS fabrication. Mesoporous SiO2 and Al2O3 films were prepared using block copolymers as the structure-directing agents, leading to films which were 70% porous and < 5 nm surface roughness. A number of etchants were investigated and good etch selectivity was observed with both dry and wet systems. Micromachining methods were used to fabricate cantilevers, micro bridges and membranes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 657: Symposia EE – Materials Science of Microelectromechanical Systems (MEMS) Devices III , 2000 , EE7.3
Copyright
Copyright © Materials Research Society 2001

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References

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