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Preparation of Large Area Cross-Sectional Tem Specimen of Semiconducting Heteroepitaxial Materials

Published online by Cambridge University Press:  21 February 2011

M. Tamura  and
S. Aoki
M. Tamura
Affiliation:
Optoelectronics Technologoy Research Laboratory, Tohkodai 5-5, Tsukuba, Ibaraki 300-26, Japan
S. Aoki
Affiliation:
Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185, Japan
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Abstract

The sample preparation procedures which enable us to observe large areas over a few tens of microns in one-dimension of semiconducting heteroepitaxial materials are described. The main principle involves the careful grinding and polishing of samples. In these procedures, another side thinning of the specimen after finishing initial side polishing is carried out using a sample platform by hand throughout all of the following steps. It is shown that for some typical examples of heteroepitaxial films general information concerning the film growth modes and structures, as well as the defect morphologies and natures introduced during growth can be effectively obtained by using the present technique.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 254: Symposium W – Specimen Preparation for Transmission Electron Microscopy of Materials III , 1991 , 201
Copyright
Copyright © Materials Research Society 1992

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References

1. Cullis, A.G. and Chew, N.G., Mat. Res. Symp. Proc. 115, 3 (1987).CrossRefGoogle Scholar
2. Brown, M.J. and Sheng, T.T., Mat. Res. Symp. Proc. 115, 29 (1987).CrossRefGoogle Scholar
3. Vanhllemont, J., Bender, H. and Rosson, L., Mat. Res. Symp. Proc. 115, 247 (1987).Google Scholar
4. Alani, R., Jones, J. and Swann, P., Mat. Res. Symp. Proc. 199, 85 (1990).CrossRefGoogle Scholar
5. Hagen, W. and Strunk, H., Appl. Phys. 17, 85 (1978).CrossRefGoogle Scholar