Hostname: page-component-7bb8b95d7b-dvmhs Total loading time: 0 Render date: 2024-10-07T04:27:53.555Z Has data issue: false hasContentIssue false
  • English
  • Français

Preparation of High-Conductive High-Temperature PTC Resistor Ba1-x SrxPb1+yO3+z

Published online by Cambridge University Press:  15 February 2011

H. Nagamoto ,
H. Kagotani  and
T. Koya
H. Nagamoto
Affiliation:
The University of Tokyo, Engineering Research Institute, 2-11-16, Yayoi, Bunkyo-ku, Tokyo 113, Japan.
H. Kagotani
Affiliation:
The University of Tokyo, Engineering Research Institute, 2-11-16, Yayoi, Bunkyo-ku, Tokyo 113, Japan.
T. Koya
Affiliation:
Ebara Corporation, Nuclcar Engineering Division, 4-2-1, Honfujisawa, Fujisawa 251, Japan.
Get access

Abstract

The positive temperature coefficient of resistivity (PTCR) effect in Ba1-xSrxPb1+yO3+z has been systematically studied. The effect of the PTC resistivity was strongly influenced by the preparation condition. The PTCR effect in metallic-conducting BaPb1+yO3+z. is confirmed around 700 °C, and the temperature where the PTCR effect starts can be successfully shifted to higher temperature range by substituting strontium for the A-site barium. The magnitude of the PTCR effect was increased and the resistibility was reduced by the enhancement of the sintering. In addition to Pb(IV) in the perovskite structure, Pb(II) is detected at the grain boundary in the sintered body.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 290: Symposium N – Dynamics in Small Confining Systems , 1992 , 239
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Haayman, P.W., Dam, R.W., and Klassen, H.A., German Patent No. 929 350 (23 June 1955).Google Scholar
2. Heywang, W., J. Am. Ceram. Soc., 47,484 (1964).Google Scholar
3. Jonker, G.H., Solid State Electron., 7, 895 (1964).Google Scholar
4. Kulwicki, B.M. and Purdes, A.J., Ferroelectronics, 1, 253 (1970).Google Scholar
5. Kuwabara, M., J. Am. Ceram. Soc., 64, 639 (1981).Google Scholar
6. Kuwabara, M., J. Am. Ceram. Soc., 64, C–170 (1981).Google Scholar
7. Kuwabara, M., J. Am. Ceram. Soc., 66, C–214 (1983).Google Scholar
8. Kuwabara, M., Suemura, S., and Kawahara, M., Am. Ceram. Soc. Bull., 64, 1394 (1985).Google Scholar
9. Kuwabara, M., Nakano, K., and Okazaki, K., J. Am. Ceram. Soc., 71, C–110 (1988).Google Scholar
10. Goodman, G., J. Am. Ceram. Soc., 46, 48 (1963).Google Scholar
11. Nemoto, H. and Oda, I., J. Am. Ceram. Soc., 63, 398 (1980).Google Scholar
12. Shannon, R. D. and Bierstedt, P.E., J. Am. Ceram. Soc., 53, 635 (1970).Google Scholar
13. Sleight, A.W., Gilson, J.L., and Bierstedt, P.E., Solid State Commun., 17, 27 (1975).Google Scholar
14. Nomura, S., and Yoshino, Y., Jpn. Kokai Tokkyo Koho, JP 60118662 (26 June 1985).Google Scholar