Hostname: page-component-cd9895bd7-gbm5v Total loading time: 0 Render date: 2024-12-27T01:31:15.799Z Has data issue: false hasContentIssue false

Preparation of heteroepitaxial SrRuO3 thin film on Si substrate and microstructure of BaTiO3-NiFe2O4 epitaxial composite thin film deposited on the SrRuO3 bottom electrode using PLD

Published online by Cambridge University Press:  24 March 2011

Naoki Wakiya
Affiliation:
Department of Materials Science and Chemical Engineering, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8561, Japan
Naonori Sakamoto
Affiliation:
Department of Materials Science and Chemical Engineering, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8561, Japan
Shigeki Sawamura
Affiliation:
Department of Materials Science and Chemical Engineering, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8561, Japan
Desheng Fu
Affiliation:
Graduate School of Science and Technology, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8561, Japan
Kazuo Shinozaki
Affiliation:
Department of Metallurgy and Ceramics Science, 2-12-1, O-okayama, Meguro-ku, Tokyo 152-8550, Japan
Hisao Suzuki
Affiliation:
Graduate School of Science and Technology, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8561, Japan
Get access

Abstract

A “0-0 type” multiferroic BaTiO3-NiFe2O4 (BT-NF) composite thin film was prepared on SrRuO3/(La,Sr)MnO3/CeO2/YSZ/Si(001) substrate using pulsed laser deposition (PLD). Epitaxial growth of the film was confirmed using x-ray pole figure measurements. Cross-sectional TEM observations revealed that the crystal structure and morphology of the BT-NF composite thin film depends on the oxygen pressure during deposition. The film deposited at 1.0×10-2 Torr has smaller grains than that deposited at 1.0×10-1 Torr. The magnetic and ferroelectric properties of BT-NF composite thin film were correlated with the microstructure that was controlled by oxygen pressure during deposition. The film deposited at 1.0×10-2 Torr had paramagnetic properties with less polarization than the film deposited at 1.0×10-1 Torr.

Type
Research Article
Copyright
Copyright © Materials Research Society 2011

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1) Kimura, T., Goto, T., Shintani, H., Ishizaka, K., Arima, T., and Tokura, Y., Nature 426, 55 (2003).Google Scholar
2) Kimura, T., Lawes, G., Goto, T., Tokura, Y., and Ramirez, A.P., Phys. Rev. B 71, 224425 (2005).Google Scholar
3) Hur, N., Park, S., Sharma, P.A., Ahn, J.S., Guha, S., and Cheong, S.W., Nature 429, 392 (2004).Google Scholar
4) Wang, J., Neaton, J.B., Zheng, H., Nagarajan, V., Ogale, S.B., Liu, B., Viehland, D., Vaithyanathan, V., Schlöm, D.G., Waghmare, U.V., Spaldin, N.A., Rabe, K.M., Wuttig, M., and Ramesh, R., Science 299, 1719 (2002).Google Scholar
5) Momozawa, N. and Yamaguchi, Y., J. Phys. Soc. Jpn. 62, 1292 (1993).Google Scholar
6) van den Boomgaard, J. and Born, R.A.J., J. Mater. Sci. 13, 1538 (1978).Google Scholar
7) Nan, C.W., Cai, N., Liu, L., Zhai, J., Ye, Y., and Lin, Y., J. Appl. Phys. 94, 5930 (2003).Google Scholar
8) Ban, K., Gomi, M., Shundo, T., and Nishimura, N., IEEE Trans. Magn. 41, 2793 (2005).Google Scholar
9) Zheng, H., Wang, J., Lofland, S.E., Ma, Z., Ardabili, L.M., Zhao, T., Riba, L.S., Shinde, S.R., Ogale, S.B., Bai, F., Viehland, D., Jia, Y., Schlöm, D.G., Wuttig, M., Roytburd, A., and Ramesh, R., Science 303, 661 (2004).Google Scholar
10) Chen, W., Wang, Z.H., Ke, C., Zhu, W., and Tan, O.K., Mater. Sci. Eng. B 162, 47 (2009).Google Scholar
11) Levin, I., Li, J., Slutsker, J., and Roytburd, A.L., Adv. Mater. 18, 2044 (2006).Google Scholar
12) Zhan, Q., Yu, R., Crane, S.P., Zheng, H., Kisielowski, C., and Ramesh, R., Appl. Phys. Lett. 89, 172902 (2006).Google Scholar
13) Muralidharan, R., Dix, N., Skumryev, V., Varela, M., Sánchez, F., and Fontcuberta, J., J. Appl. Phys. 103, 07E301 (2008).Google Scholar
14) Tan, Z., Slutsker, J., and Roytburd, A.L., J. Appl. Phys. 105, 061615 (2009).Google Scholar
15) Mackenzie, A.P., Reiner, J.W., Tyler, A.W., Galvin, L.M., Julian, S.R., Beasley, M.R., Geballe, T.H., and Kapitulnik, A., Phys. Rev. B 58, R13318 (1998).Google Scholar
16) Zheng, H., Kreisel, J., Chu, Y.H., Ramesh, R., and -Riba, L.S., Appl. Phys. Lett. 90, 113113 (2007).Google Scholar
17) Liu, M., Lin, X., Lou, J., Zheng, S., Du, K., and Sun, N.X., J. Appl. Phys. 102, 083911 (2007).Google Scholar
18) Rigato, F., Estrade, S., Arbiol, J., Peiro, F., Luders, U., Marti, X., Sanchez, F., and Fontcuberta, J., Mater. Sci. Eng. B 144, 43 (2007).Google Scholar