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Preparation of GaAs Soi and its Laser Recrystallization
Published online by Cambridge University Press: 22 February 2011
Abstract
GaAs SOI consisting of a sputtered GaAs film on a SiO2 −Si or sapphire substrate is irradiated by CW Ar+ laser beam with a view to investigating its recrystallization. Using AES, x-ray diffraction, TEM and ED, we have studied the compositions, crystal orientations and grain size of the laser-irradiated GaAs films. The possible application of GaAs SOI to devices is discussed on the basis of the experimental results.
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- Copyright © Materials Research Society 1984