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Preparation of Crystalline Si thin Films by Spontaneous Chemical Deposition

Published online by Cambridge University Press:  21 February 2011

Tohru Komiya ,
Akira Kamo ,
Hiroshi Kujirai ,
Isamu Shimizut  and
Jun-Ichi Hanna
Tohru Komiya
Affiliation:
Tokyo Institute of Technology Imaging Science and Engineering Laboratory Graduate School at Nagatsuta Nagatsuta, Midori-ku, Yokohama, 227, Japan
Akira Kamo
Affiliation:
Tokyo Institute of Technology Imaging Science and Engineering Laboratory Graduate School at Nagatsuta Nagatsuta, Midori-ku, Yokohama, 227, Japan
Hiroshi Kujirai
Affiliation:
Tokyo Institute of Technology Imaging Science and Engineering Laboratory Graduate School at Nagatsuta Nagatsuta, Midori-ku, Yokohama, 227, Japan
Isamu Shimizut
Affiliation:
Nagatsuta, Midori-ku, Yokohama, 227, Japan
Jun-Ichi Hanna
Affiliation:
Tokyo Institute of Technology Imaging Science and Engineering Laboratory Graduate School at Nagatsuta Nagatsuta, Midori-ku, Yokohama, 227, Japan
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Abstract

The novel technique for the preparation of crystalline Si thin films termed “Spontaneous Chemical Deposition” has been proposed, in which silane decomposes spontaneously by gas phase reactions with fluorine at reduced pressure. The technique provided us the crystalline films in a wide range of the preparation conditions by a choice of the external parameters for the reactions. The films exhibited unique characteristics in the chemical structure and the optical and electrical properties, different from the conventional uc-Si:H thin films by the silane plasma processes.

The technique have been successfully applied for the homoepitaxial growth of Si thin films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 164: Symposium H – Materials Issues in Microcrystalline Semiconductors , 1989 , 63
Copyright
Copyright © Materials Research Society 1990

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