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Preparation of Cross-Sectional TEM Samples of PbTe and CdxPb1−x Te on BaF2

Published online by Cambridge University Press:  16 February 2011

John P. McCaffrey ,
Suhit R. Das  and
John G. Cook
John P. McCaffrey
Affiliation:
National Research Council of Canada, Microstructural Sciences Laboratory, Montreal Rd. Labs, Ottawa, Ontario, KIA 0R6, Canada
Suhit R. Das
Affiliation:
National Research Council of Canada, Microstructural Sciences Laboratory, Montreal Rd. Labs, Ottawa, Ontario, KIA 0R6, Canada
John G. Cook
Affiliation:
National Research Council of Canada, Microstructural Sciences Laboratory, Montreal Rd. Labs, Ottawa, Ontario, KIA 0R6, Canada
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Abstract

Epitaxial PbTe and CdxPb1−xTe films have been grown on single crystal (111) BaF2 by low energy bias sputtering, and have been analyzed by transmission electron microscopy (TEM) and transmission electron diffraction (TED). Preparation of suitable cross-sectional TEM samples was made difficult by the tendency of the substrate to cleave apart during dimpling, and by the epoxy forming bridges across the sample during atom milling. Suitable preparation techniques were developed employing back-polishing the BaF2 substrates to <0.2 mm thickness, using a suitable epoxy, and shielding the argon atom beam during milling to prevent milling parallel to the surface. In cases where an epoxy bridge did form across the sample, the bridge was broken manually or by atom milling, depending upon the area of sample which was being investigated. These techniques are applicable to other materials which produce similar problems during TEM sample preparation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 199: Symposium W – Specimen Preparation for Transmission Electron Microscopy of Materials II , 1990 , 131
Copyright
Copyright © Materials Research Society 1990

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References

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