Hostname: page-component-586b7cd67f-rdxmf Total loading time: 0 Render date: 2024-11-25T15:52:08.873Z Has data issue: false hasContentIssue false
  • English
  • Français

Preparation of a-Si:H Films by VHF Plasma CVD

Published online by Cambridge University Press:  26 February 2011

Shunri Oda ,
Jun'Ichirou Noda  and
Masakiyo Matsumura
Shunri Oda
Affiliation:
Tokyo Institute of Technology, O-okayama, Meguro-ku, Tokyo 152, JAPAN.
Jun'Ichirou Noda
Affiliation:
Tokyo Institute of Technology, O-okayama, Meguro-ku, Tokyo 152, JAPAN.
Masakiyo Matsumura
Affiliation:
Tokyo Institute of Technology, O-okayama, Meguro-ku, Tokyo 152, JAPAN.
Get access

Abstract

A novel method of the preparation of a-Si:H films by employing VHF(144MHz band) plasma is described. Optical emission spectroscopy is employed as a diagnostic tool in the plasma. Due to high generation efficiency of radicals, a-Si:H films are deposited at high deposition rates at low power density without sacrificing electrical properties. Criteria for the deposition of microcrystalline Si films are also discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 118: Symposium E – Amorphous Silicon Technology , 1988 , 117
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Matsuda, A., Kaga, T., Tanaka, H. and Tanaka, K., Jpn. J. Appl. Phys. 23, L567 (1984).CrossRefGoogle Scholar
2. Curtins, H., Wyrsch, N., Favre, M., Prasad, K., Brechet, M. and Shah, A. V., Mat. Res. Soc. Proc. 95, 249 (1987).CrossRefGoogle Scholar
3. Hamasaki, T., Kurata, H., Hirose, M. and Osaka, Y., Appl. Phys. Lett. 37, 1984 (1980).CrossRefGoogle Scholar