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Preparation of Al2 O3 -Coated Metal Substrate for High Density Electronic Assembly

Published online by Cambridge University Press:  21 February 2011

K. Nakada ,
M. Ono  and
S. Kosuge
K. Nakada
Affiliation:
NKK Corporation, Kawasaki-ku, Kawasaki, 210, Japan.
M. Ono
Affiliation:
NKK Corporation, Kawasaki-ku, Kawasaki, 210, Japan.
S. Kosuge
Affiliation:
NKK Corporation, Kawasaki-ku, Kawasaki, 210, Japan.
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Abstract

A study was conducted on the preparation of Al2 O3 -coated metal substrates for high density electronic assembly. Al2 O3 films of 3∼15μm thickness were deposited on metal substrates, such as aluminum, stainless steels and the like, at a deposition rate of 0.2∼5μm/min. They were examined in terms of chemical composition, microstructure, density, hardness, breakdown voltage, thermal conductivity and so on. It was found that the dense and stoichiometric films could be achieved by adjusting the process parameters, in particular, substrate temperature, deposition rate and distance between target and substrate. The results obtained led to the conclusion that this new Al2O3-coated metal substrate could be effective for high density electronic assembly.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 167: Symposium K – Advanced Electronic Packaging Materials , 1989 , 193
Copyright
Copyright © Materials Research Society 1990

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