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Preparation and Structural Study of Metastable Mn Phase Grown on GaAs(OOl) Substrate

Published online by Cambridge University Press:  21 February 2011

X. Jin ,
M. Zhang ,
G. S. Dong ,
X. G. Zhu ,
M. Xu ,
Y. Chen ,
X.L. Shen  and
Xun Wang
X. Jin
Affiliation:
Fudan T. D. Lee Physics Laboratory and Surface Physics Laboratory, Fudan University, Shanghai 200433, China
M. Zhang
Affiliation:
Fudan T. D. Lee Physics Laboratory and Surface Physics Laboratory, Fudan University, Shanghai 200433, China
G. S. Dong
Affiliation:
Fudan T. D. Lee Physics Laboratory and Surface Physics Laboratory, Fudan University, Shanghai 200433, China
X. G. Zhu
Affiliation:
Zhejiang Institute of Technology, Hangzhou 310014, China
M. Xu
Affiliation:
Fudan T. D. Lee Physics Laboratory and Surface Physics Laboratory, Fudan University, Shanghai 200433, China
Y. Chen
Affiliation:
Fudan T. D. Lee Physics Laboratory and Surface Physics Laboratory, Fudan University, Shanghai 200433, China
X.L. Shen
Affiliation:
Center of Measurement and Analysis, Fudan University, Shanghai 200433, China
Xun Wang
Affiliation:
Fudan T. D. Lee Physics Laboratory and Surface Physics Laboratory, Fudan University, Shanghai 200433, China
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Abstract

Single crystal Mn thin films have been successfully grown on GaAs(001) substrates for the first time by molecular beam epitaxy. The bulk atomic structure of the manganese films is determined to be the face-centered-cubic metastable phase with the lattice parameter of 0.362 nm, by in situ reflection high energy electron diffraction (RHEED) and ex situ x-ray diffraction (XRD).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 326: Symposium M – Growth, Processing, and Characterization of Semiconductor Heterostructures , 1993 , 323
Copyright
Copyright © Materials Research Society 1994

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References

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