Published online by Cambridge University Press: 21 February 2011
Single crystal Mn thin films have been successfully grown on GaAs(001) substrates for the first time by molecular beam epitaxy. The bulk atomic structure of the manganese films is determined to be the face-centered-cubic metastable phase with the lattice parameter of 0.362 nm, by in situ reflection high energy electron diffraction (RHEED) and ex situ x-ray diffraction (XRD).