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Preparation and Properties of Porous Bismuth Films

Published online by Cambridge University Press:  10 February 2011

W. -N. Shen ,
B. Dunn ,
F. Ragot ,
M. S. Goorsky ,
C. D. Moore ,
G. Chen ,
R. Gronsky ,
W. W. Fuller-Mora ,
D. J. Gillespie  and
A. C. Ehrlich
W. -N. Shen
Affiliation:
Department of Materials Science and Engineering
B. Dunn
Affiliation:
Department of Materials Science and Engineering
F. Ragot
Affiliation:
Department of Materials Science and Engineering
M. S. Goorsky
Affiliation:
Department of Materials Science and Engineering
C. D. Moore
Affiliation:
Department of Materials Science and Engineering
G. Chen
Affiliation:
Department of Mechanical and Aerospace Engineering, University of California, Los Angeles, CA 90095
R. Gronsky
Affiliation:
Department of Materials Science and Mineral Engineering, University of California, Berkeley, CA 94720
W. W. Fuller-Mora
Affiliation:
Naval Research Laboratory, Washington, DC 20375
D. J. Gillespie
Affiliation:
Naval Research Laboratory, Washington, DC 20375
A. C. Ehrlich
Affiliation:
Naval Research Laboratory, Washington, DC 20375
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Abstract

The use of chemical solution routes to form inorganic thin films is a relatively new method which represents an alternative to vapor phase routes. The present study involves the use of a chemical solution route, the decomposition of metal carboxylates, to prepare bismuth thin films of controlled porosity. Such morphologies offer the opportunity to disrupt phonon transport without greatly affecting electrical conductivity and bismuth represents a well known system in which to investigate these effects. Porous bismuth thin films have been prepared using bismuth 2-ethylhexanoate (Bi[OOCCH(C2H5)C4H9]3) as the precursor in a solvent of 2-methyl- 1-propanol. The solution is deposited on glass, Kapton, silicon, alumina or magnesia substrates by spin coating and heated to between 250 – 300°C in hydrogen. Heat treatment temperature and time are important for controlling film microstructure as both pore volume (25 to 50%) and preferred orientation depend upon heat treatment conditions. Bismuth films (62 nm thick) with 32% porosity exhibit conductivities in the range of 150 S/cm with Seebeck coefficients comparable to that of bulk materials.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 545: Symposium Z – Thermoelectric Materials 1998 - The Next Generation… , 1998 , 273
Copyright
Copyright © Materials Research Society 1999

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