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Preparation and Patterning of GaSb Surfaces with Br-IBAE for Antimonide Based Molecular Beam Epitaxy

Published online by Cambridge University Press:  01 February 2011

S.R. Vangala ,
B. Krejca ,
K. Krishnaswami ,
H. Dauplaise ,
X. Qian ,
B. Zhu ,
M. Ospina ,
C. Sung ,
K. Vaccaro  and
D. Bliss
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S.R. Vangala
Affiliation:
Photonics Center, Dept. of Physics, University of Massachusetts, Lowell, MA 01854, USA
B. Krejca
Affiliation:
Photonics Center, Dept. of Physics, University of Massachusetts, Lowell, MA 01854, USA
K. Krishnaswami
Affiliation:
Photonics Center, Dept. of Physics, University of Massachusetts, Lowell, MA 01854, USA
H. Dauplaise
Affiliation:
Air Force Research Laboratory/SNHC, Hanscom AFB, MA 01731, USA
X. Qian
Affiliation:
Photonics Center, Dept. of Physics, University of Massachusetts, Lowell, MA 01854, USA
B. Zhu
Affiliation:
Photonics Center, Dept. of Physics, University of Massachusetts, Lowell, MA 01854, USA
M. Ospina
Affiliation:
Center for Advance Materials, University of Massachusetts, Lowell, MA 01854, USA
C. Sung
Affiliation:
Center for Advance Materials, University of Massachusetts, Lowell, MA 01854, USA
K. Vaccaro
Affiliation:
Air Force Research Laboratory/SNHC, Hanscom AFB, MA 01731, USA
D. Bliss
Affiliation:
Air Force Research Laboratory/SNHC, Hanscom AFB, MA 01731, USA
W.D. Goodhue
Affiliation:
Photonics Center, Dept. of Physics, University of Massachusetts, Lowell, MA 01854, USA
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Abstract

Bromine Ion Beam Assisted Etching (Br-IBAE) is shown to be useful in removing GaSb wafer chemical mechanical polish (CMP) surface and subsurface damage; creating microstructure patterns in GaSb surfaces through stencil, photoresist, and oxides masks; and stabilizing the as-etched GaSb surface with a thin, easily thermally desorbed oxide layer. Thus, the Br-IBAE technique is well suited as a GaSb surface final-polish technique in overgrowth applications that require “epi-ready” GaSb (100) surfaces for molecular beam epitaxy (MBE) as well as applications such as quantum wires and dots that require high-quality GaSb/AlInGaSb MBE overgrowth over patterned GaSb (100) surfaces.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 792: Symposium R – Radiation Effects and Ion Beam Processing of Materials , 2003 , R9.2
Copyright
Copyright © Materials Research Society 2004

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References

1 Dutta, P.S., Bhatt, H.L., Kumar, V., “Physics and technology of Gallium antimonide: An Emerging Optoelectronic Material,” J. of Appl. Phys., Vol. 81(9), 5821–5870 (1997)Google Scholar
2 Liu, Z.Y., Hawkins, B., Keuch, T.F., “Chemical and structural characterization of GaSb(100) surfaces treated by HCl based solutions and annealed in vacuum,” J. Vac. Sci. Technol. B, Vol. 21 (1), 71 (2003)Google Scholar
3 Papis, E., Piotrowska, A., Kaminska, E., Golaszewska, K., Jung, W., Katcki, J., Kudla, A., Piskorski, M., Piotrowski, T., Adamczewska, J., “Sulphide treatment of GaSb surface: influence on the LPE growth of InGaAsSb/AlGaAsSb heterostructures,” Vacuum, Vol. 57, 171 (2000)Google Scholar
4 Marciniak, M., Hengehold, R., Yeo, Y., Turner, G.W., “Optical characterization of molecular beam epitaxy grown InAsSb nearly lattice matched to GaSb,” J. Appl. Phys., Vol. 84, 480 (1998)Google Scholar
5 Nagy, G., Ahmad, R., Levy, M., Osgood, R.M., Manfra, M.J., Turner, G.W., “Chemically assisted ion beam etching of submicron features in GaSb,” Appl. Phys. Lett., Vol. 72, 1350 (1998)Google Scholar
6 Rossler, J.M., Royter, Y., Mull, D.E., Goodhue, W.D., and Fonstad, C.G., “Bromine Ion-beam assisted etching of InP and GaAs,” J. Vac. Sci. Technol. B, Vol. 16(3), 1012–1017 (1998)Google Scholar
7 Goodhue, W.D., Royter, Y., Mull, D.E., Choi, S.S., and Fonstad, C.G., “Bromine ion-beam-assisted etching of III-V semiconductors,” Jour. Electron. Mater., Vol. 28(4), 364–368 (1999)Google Scholar
8 Krishnaswami, K, Krejca, B., Vangala, S., Ospina, M., Sung, C., Allen, L.P., Santeufemio, C., Vaccaro, K., and Goodhue, W.D, “Determination of nano-fluctuations in surface oxides of GaSb with Br-IBAE,” in print, Mat. Res. Symp. Proc., Vol. 786 (2003)Google Scholar