Hostname: page-component-586b7cd67f-gb8f7 Total loading time: 0 Render date: 2024-11-25T17:30:57.477Z Has data issue: false hasContentIssue false

Preparation and Oxygen Permeability of La-Sr-Co-Fe Oxide Thin Films by a Chemical Solution Deposition Process

Published online by Cambridge University Press:  11 February 2011

Hirofumi Kakuta
Affiliation:
Smart Structure Research Center, National Institute of Advanced Industrial Science and Technology, Tsukuba Central 2, 1–1–1, Umezono, Tsukuba 305–8568, Japan Core Research for Evolutional Science and Technology (CREST), Japan Science and Technology Corporation (JST), 2–1–13, Higashi-Ueno, Taito-ku, Tokyo 110–0015, Japan
Takashi Iijima
Affiliation:
Smart Structure Research Center, National Institute of Advanced Industrial Science and Technology, Tsukuba Central 2, 1–1–1, Umezono, Tsukuba 305–8568, Japan
Hitoshi Takamura
Affiliation:
Department of Materials Science, Graduate School of Engineering, Tohoku University Aoba-yama02, Sendai 980–8579, Japan
Get access

Abstract

Oxygen-ionic and electronic conductive thin films with the composition of La0.6Sr0.4Co0.5Fe0.5O3-α (LSCF) were prepared on a porous alumina substrate by a chemical solution deposition (CSD) process and their oxygen permeating flux densities were measured. Thickness of the LSCF layer on the substrate was about 0.4 μm. Oxygen flux density of the LSCF sample was found to be 0.6 μmol·cm-2·s-1, however, time-dependent degradation of oxygen flux was observed. The CeO2 barrier layer between the LSCF layer and the substrate was effective in order to improve time-dependent degradation of oxygen flux.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Teraoka, Y., Zhang, H. M., Furukawa, S. and, Yamazoe, N., Chem. Lett. 1743 (1985).Google Scholar
2. Teraoka, Y., Nobunaga, T. and Yamazoe, N., Chem. Lett. 503 (1988).Google Scholar
3. Kilner, J., Benson, S., Lane, J. and Waller, D., Chemistry & Industry 907 (1997).Google Scholar
4. Badwal, S. P. S. and Ciacchi, F. T., Adv. Mater. 13, 993 (2001).Google Scholar
5. Liu, M. and Wang, D., J. Mater. Res. 10, 3210 (1995).Google Scholar
6. Chen, C., Bouwmeester, H. J. M., Kruidhof, H., Elshof, J. E. and Burggraaf, A. J., J. Mater. Chem. 6, 815 (1996).Google Scholar
7. Xia, C., Ward, T. L. and Atanasova, P, J. Mater. Res. 13, 173 (1998).Google Scholar
8. Zhuang, H., Kozuka, H., Yoko, T. and Sakka, S., Jpn. J. Appl. Phys. 29, L1107 (1990).Google Scholar
9. Iijima, Takashi, He, Gang and Funakubo, Hiroshi, J. Crystal Growth 236, 248 (2002).Google Scholar