Hostname: page-component-586b7cd67f-dsjbd Total loading time: 0 Render date: 2024-11-29T09:46:18.317Z Has data issue: false hasContentIssue false
  • English
  • Français

Preparation and Evaluation of Erbium Tris(Amide) Source Compounds for Erbium Doping of Semiconducting Materials

Published online by Cambridge University Press:  22 February 2011

William S. Rees Jr. ,
Uwe W. Lay  and
Anton C. Greenwald
William S. Rees Jr.
Affiliation:
Department of Chemistry and Materials Research and Technology Center The Florida State University, Tallahassee, FL 32306-3006
Uwe W. Lay
Affiliation:
Department of Chemistry and Materials Research and Technology Center The Florida State University, Tallahassee, FL 32306-3006
Anton C. Greenwald
Affiliation:
Spire Corporation, One Patriots Park, Bedford, MA 01730-2396
Get access

Abstract

Rare earth elements are important as dopants in the preparation of semiconductors, particularly for temperature-independent optical devices. The compound Er{N\Si(CH3)3]2}3 has been demonstrated to be a suitable source compound for erbium doping of semiconducting materials. Further investigations of this and related compounds have been carried out. New compounds have been characterized by 1H NMR, FTIR, TGA and elemental analysis techniques. Vapor pressures and decomposition profiles have been examined for these compounds.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 334: Symposium W – Gas-Phase and Surface Chemistry in Electronic Materials Processing , 1993 , 207
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

references

1. Rare Earth Doped Semiconductors, edited by Pomrenke, G.S., Klein, P.B., Langer, D.W. (Mater. Res. Soc. Proc. 301, Pittsburgh, PA, 1993).Google Scholar
2. Uwai, K. K., Nakagome, H., Takahei, K., Appl. Phys. Lett. 51, 1010 (1987).Google Scholar
3. Uwai, K. K., Nakagome, H., Takahei, K., J. Crystal Growth 93, 583 (1988).Google Scholar
4. Weber, J., Moser, M., Stapor, A., Scholz, F., Bohnert, G., Hangleiter, A., Hammel, A., Wiedmann, D., Weidlein, J., J. Crystal Growth 104, 815 (1990).CrossRefGoogle Scholar
5. Neuhalfen, A.J., Wessels, B.W., Appl. Phys. Lett. 59, 2317 (1991).Google Scholar
6. Scholz, F., Weber, J., Pressel, K., Dörnen, A., in Rare Earth Doped Semiconductors, edited by Pomrenke, G.S., Klein, P.B., Langer, D.W. (Mater. Res. Soc. Proc. 301, Pittsburgh, PA, 1993) pp. 3–13.Google Scholar
7. Greenwald, A.C., Rees, W.S. Jr., Lay, U.W., in Rare Earth Doped Semiconductors, edited by Pomrenke, G.S., Klein, P.B., Langer, D.W. (Mater. Res. Soc. Proc. 301, Pittsburgh, PA, 1993) pp. 21–26.Google Scholar
8. Bradley, D.C., Ghotra, J.S., Hart, F.A., J. Chem. Soc., Dalton 1973, 1021.Google Scholar
9. Bürger, H., Wannagat, U., Monatsh. Chem. 94, 1007 (1963).Google Scholar
10. (a) Rees, W.S. Jr., Green, D.M., Hesse, W., Anderson, T.J., Pathangey, B., in Chemical Perspectives of Microelectronic Materials, edited by Abernathy, C.R., Bates, C.W. Jr., Bohling, D.A., Hobson, W.S. (Mater. Res. Soc. Proc. 282, Pittsburgh, PA, 1993) pp. 63–67. (b) W.S. Rees, Jr., D.M. Green, T.J. Anderson, E. Bretschneider, B. Pathangey, J. Kim, J. Electronic Materials 21, 361 (1993). (c) W.S. Rees, Jr., T.J. Anderson, D.M. Green, E. Bretschneider; in Wide Band-Gap Semiconductors, edited by T.D. Moustakas, J.I. Pankove, Y. Hamakawa, (Mater. Res. Soc. Proc. 242, Pittsburgh, IDA, 1992) pp. 281-286. (d) W.S. Rees, Jr., D.M. Green, W. Hesse; Polyhedron 11, 1697 (1992). (e) W.S. Rees, Jr., O. Just, presentation at the MRS fall meeting Boston 1993, W2.9.Google Scholar