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Preparation and Electrical Characteristics of (100), (111), and Randomly Oriented PZT Thin Films

Published online by Cambridge University Press:  15 February 2011

Chang Jung Kim
Affiliation:
Dept Of Ceramic Science and Engineering, Korea Advanced Institute of Science and Technology, Yusong Gu 373–1, Taejon, Korea
Dae Sung Yoon
Affiliation:
Dept Of Ceramic Science and Engineering, Korea Advanced Institute of Science and Technology, Yusong Gu 373–1, Taejon, Korea
Joon Sung Lee
Affiliation:
Dept Of Ceramic Science and Engineering, Korea Advanced Institute of Science and Technology, Yusong Gu 373–1, Taejon, Korea
Chaun Gi Choi
Affiliation:
Dept Of Ceramic Science and Engineering, Korea Advanced Institute of Science and Technology, Yusong Gu 373–1, Taejon, Korea
Won Jong Lee
Affiliation:
Dept. of Electronics Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Yusong Gu 373–1, Taejon, Korea
Kwangsoo No
Affiliation:
Dept Of Ceramic Science and Engineering, Korea Advanced Institute of Science and Technology, Yusong Gu 373–1, Taejon, Korea
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Abstract

The (100), (111) and randomly oriented PZT thin films were fabricated on Pt/Ti/Coming 7059 glass using sol-gel method. The thin films having different orientation were fabricated by different drying conditions for pyrolysis. The preferred orientations of the PZT thin films were observed using XRD, rocking curves, and pole figures. The microstructures were investigated using SEM. The hysteresis loops and capacitance-voltage characteristics of the films were investigated using a standardized ferroelectric test system. The dielectric constant and current-voltage characteristics of the films were investigated using an impedance analyzer and pA meter, respectively. The films oriented in a particular direction showed superior electrical characteristics to the randomly oriented films.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

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References

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