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Preparation and Characterization of Tin-doped Indium (ITO) Film by Photo Reaction of Nano-Particle (PRNP) Using Excimer Laser

Published online by Cambridge University Press:  15 March 2011

T. Tsuchiya ,
F. Yamaguchi ,
I. Morimoto ,
T. Nakajima  and
T. Kumagai
T. Tsuchiya
Affiliation:
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 5, 1-1-1 Higashi Tsukuba, Ibaraki 305-8565, Japan Asahi Kasei Corporation, Central R&D Laboratories, 2-1, Samejima, Fuji-city, Shizuoka 416-8501, Japan
F. Yamaguchi
Affiliation:
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 5, 1-1-1 Higashi Tsukuba, Ibaraki 305-8565, Japan Asahi Kasei Corporation, Central R&D Laboratories, 2-1, Samejima, Fuji-city, Shizuoka 416-8501, Japan
I. Morimoto
Affiliation:
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 5, 1-1-1 Higashi Tsukuba, Ibaraki 305-8565, Japan Asahi Kasei Corporation, Central R&D Laboratories, 2-1, Samejima, Fuji-city, Shizuoka 416-8501, Japan
T. Nakajima
Affiliation:
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 5, 1-1-1 Higashi Tsukuba, Ibaraki 305-8565, Japan Asahi Kasei Corporation, Central R&D Laboratories, 2-1, Samejima, Fuji-city, Shizuoka 416-8501, Japan
T. Kumagai
Affiliation:
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 5, 1-1-1 Higashi Tsukuba, Ibaraki 305-8565, Japan Asahi Kasei Corporation, Central R&D Laboratories, 2-1, Samejima, Fuji-city, Shizuoka 416-8501, Japan
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Abstract

An ITO film on an SiO2 substrate was prepared from spin-coated nano-particles using a simple thermal process and photo irradiation process. The effects of the excimer lamp and excimer laser on the resistivity of the film were investigated. When the film is 40 nm thick, the combined two-step irradiation by an excimer lamp and laser in N2 is effective for the preparation of the ITO film with a lower resistivity. Using the two-step irradiation and one-step KrF irradiation in N2 at room temperature, the resistivity of the ITO film was 5.94×10−4Ωcm. On the other hand, when using the thermal process, the resistivity of the film sintered at 500 °C in N2 was 4.10×10−3Ωcm. The differences in resistivity are discussed on the basis of the microstructure using SEM, XRD and Hall measurements.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1113: Symposium F – Low-Cost Solution-Based Deposition of Inorganic Films for Electronic/Photonic Devices , 2008 , 1113-F06-20
Copyright
Copyright © Materials Research Society 2009

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References

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