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Preparation and Characterization of Thin Films by Pulsed Laser Deposition for NOx gas Sensor

Published online by Cambridge University Press:  01 February 2011

Md. Mosharraf Hossain Bhuiyan
Affiliation:
[email protected], Kumamoto University, Graduate School o Science and Technology, 2-29-1 Kurokami, Kumamoto, N/A, 862-0976, Japan, 81-96-342-3921-932, 81-96-342-3630
Tsuyoshi Ueda
Affiliation:
[email protected], Kumamoto University, Graduate School of Science and Technology, Japan
Hiroshi Shinguu
Affiliation:
[email protected], Kumamoto University, Graduate School of Science and Technology, Japan
Tomoaki Ikegami
Affiliation:
[email protected], Kumamoto University, Department of Electrical and Computer Engineering, Japan
Kenji Ebihara
Affiliation:
[email protected], Kumamoto University, Department of Electrical and Computer Engineering, Japan
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Abstract

Gas sensors based on WO3 thin films doped with platinum (Pt) or palladium (Pd) were prepared by KrF excimer pulsed laser deposition method combined with dc sputtering. The films were deposited on silicon, quartz and Al2O3 sensor substrate with Pt interdigital electrodes at various substrate temperatures from 300°C to 500 °C, and oxygen pressures from 100 mTorr to 300 m Torr, respectively during the deposition. The morphology and structure of the films were examined by AFM and XRD. The sensor property of the WO3−x thin films was measured by the two terminal resistance method at operating temperatures of 25 °C to 400 °C. The sensitivity of the WO3 thin film gas sensors with doping (platinum or palladium) was found to be higher than that of undoped WO3 thin films gas sensors. The sensitivity of the pt doped WO3 films to different concentration of NO gas was examined and the sensitivity was found to be increased with increasing NO gas concentration.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

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References

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