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Preparation and Characterization of (Sr1−xTix)O3 and (Ba1−xSrx)TiO3 Thin Films using ECR Plasma Assisted MOCVD

Published online by Cambridge University Press:  10 February 2011

Kwangsoo No ,
Joon Sung Lee ,
Han Wook Song ,
Won Jong Lee ,
Byoung Gon Yu  and
Zhong-Tao Jiang
Kwangsoo No
Affiliation:
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Taejon, Korea
Joon Sung Lee
Affiliation:
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Taejon, Korea
Han Wook Song
Affiliation:
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Taejon, Korea
Won Jong Lee
Affiliation:
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Taejon, Korea
Byoung Gon Yu
Affiliation:
Electronics and Telecommunications Research Institute, Taejon, Korea
Zhong-Tao Jiang
Affiliation:
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Taejon, Korea
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Abstract

Ba(TMHD)2, Sr(TMHD)2 and Ti-isopropoxide were used to fabricate the (SrxTi1 x)O3 and (Ba1 x Srx)TiO3 thin films. The decomposition and degradation characteristics of Ba(TMHD)2 and Sr(TMHD)2 with storage time were analyzed using a differential scanning calorimeter (DSC). The thin films were fabricated on Si(p-type 100) and Pt/SiO2/Si substrates with Ar carrier gas using ECR plasma (or without ECR plasma) assisted MOCVD. Experimental results showed that the ECR oxygen plasma increased the deposition rate, the ratio of Sr/Ti, the dielectric constant and the leakage current density of the film. The dependency of the crystallinity and the electrical properties on the Sr/Ti ratio of films were investigated. However, almost of the films deposited with Ar carrier gas had slightly high dielectric loss and high leakage current density and showed non-uniform compositional depth profiles. NH3 gas was also used to decrease the degradation of the MO-sources. Mass spectra in-situ monitoring of source vapors in ECR-PAMOCVD system were obtained. By introducing NH3 as a carrier gas, a significant improvement was achieved in the volatility and the thermal stability of the precursors, and the vaporization temperatures of the precursors were reduced compared to Ar carrier gas. The uniform compositional depth profile, less hydrogen and carbon content and the good electrical properties of (SrxTi1−x)O3 thin films were obtained with NH3 carrier gas. The (Ba1−xSrx)TiO3 thin film were fabricated to have very fine and uniform microstructure, the dielectric constant of 456, the dielectric loss of 0.0128, the leakage current density of 5.01 × 10−8A/cm2 at 1V and the breakdown field of 3.65MV/cm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 433: Symposium T – Ferroelectric Thin Films V , 1996 , 9
Copyright
Copyright © Materials Research Society 1996

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