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Preparation and Characterization of Sol-Gel Derived PbTiO3 Thin Layers on GaAs
Published online by Cambridge University Press: 16 February 2011
Abstract
PbTiO3 thin layers were deposited onto GaAs by sol-gel processing. The GaAs substrates were encapsulated with Si3N4 or SiO2 to minimize diffusion problems. Gel layers were heat treated to 350°C for removal of organic species and for the densification of the amorphous gel structure. Rapid thermal processing at 600°C was used to crystallize PbTiO3 into the perovskite structure. SIMS analysis determined limited diffusion of Ga and As into PbTiO3. The fine grain microstructure contained domains.
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- Copyright © Materials Research Society 1990
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