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Preparation And Characterization Of Pzt Thin Films On Ruox/Pt Multilayered Electrode By Mocvd

Published online by Cambridge University Press:  10 February 2011

Tae‐Young Kim ,
Daesig Km ,
Chee Won Chung ,
June Key Lee  and
Inyong Song
Tae‐Young Kim
Affiliation:
Samsung Advanced Institute of Technology, P.O. Box 111, Suwon 440‐600, Korea
Daesig Km
Affiliation:
Samsung Advanced Institute of Technology, P.O. Box 111, Suwon 440‐600, Korea
Chee Won Chung
Affiliation:
Samsung Advanced Institute of Technology, P.O. Box 111, Suwon 440‐600, Korea
June Key Lee
Affiliation:
Samsung Advanced Institute of Technology, P.O. Box 111, Suwon 440‐600, Korea
Inyong Song
Affiliation:
Samsung Advanced Institute of Technology, P.O. Box 111, Suwon 440‐600, Korea
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Abstract

Ferroelectric lead zirconate titanate (PZT) thin films have been successfully prepared on a RuOx/Pt multilayered electrode by Metal Organic Chemical Vapor Deposition (MOCVD). The multilayered electrode was introduced to enhance device reliability for FRAM and DRAM applications. The variations in the microstructure and ferroelectric properties of the PZT thin films were investigated as a function of substrate thickness. The microstructure of the PZT thin films was found to have a strong dependence on the surface morphology of the substrate. The control of microstructure resulted in improved ferroelectric properties. The endurance of the Pt/RuOx/PZT/RuOx/Pt capacitor was also maintained up to 1010 cycles without any serious degradation. The ferroelectric capacitors on 4” wafer were integrated by using Inductively Coupled Plasma Reactive Ion Etching (ICP RIE) system and the fully processed MOCVD PZT capacitors showed good ferroelectric properties (Vc=0.57V, ργ=22μC/cm2 respectively).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 446: Amorphous and Crystalline Insulating Thin Films–1996 , 1996 , 361
Copyright
Copyright © Materials Research Society 1997

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References

1 de Keijer, M., van Veldhoven, P. J. and Dormans, G. J. M., Mat. Res. Soc. Symp. Proc., 310, 223 (1993)Google Scholar
2 de Keijer, M., van Veldhoven, P. J., Dormans, G. J. M. and Larsen, P. K., Integrated Ferroelectrics 3, 131 (1993)Google Scholar
3 Shiosaki, T., Shimizu, M. and Kinoshita, M., Integrated Ferroelectrics, 7, 111 (1995).Google Scholar
4 Shimizu, M., Hyodo, S., Fujisawa, H., Niu, H. and Shiosaki, T., Mat. Res. Soc. Symp. Proc, 433, 201 (1996)Google Scholar
5 Kim, D., Kim, T., Lee, J. K., Tao, W. and Desu, S. B., Mat. Res. Soc. Symp. Proc, 433, 213 (1996)Google Scholar
6 Peng, C. H. and Desu, S.B., Appi. Phys. Lett. 61, 16 (1992)Google Scholar
7 Chung, I., Lee, J.K., Lee, W.I., Chung, C.W. and Desu, S. B., Mat. Res. Soc. Symp, Proc, 361, 249 (1995)Google Scholar
8 Al‐Shareef, H. N., Bellur, K. R., Auciello, O., Kingon, A. I., Integrated Ferroelectrics, 8,151 (1995)Google Scholar
9 Takeyama, K., Sakuma, T. and Miyasaka, Y., Appi. Phys. Lett., 64(22), 2967 (1994)Google Scholar
10 Chung, I., Lee, J. K., Kim, C. J., Chung, C. W., The Third Pacifie Rim Conference on Ferroelectric Applications Proc. (1996) (to be published)Google Scholar
11 Chung, C. W., Lee, J. K., Kim, C. J., Chung, I., Integrated Ferroelectrics (1996) (to be published)Google Scholar