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Preparation and Characterization of Highly Conductive (100 S/cm) Phosphorus Doped νc-Si:H Films Deposited Using the VHF-GD Technique

Published online by Cambridge University Press:  21 February 2011

Kshem Prasad ,
F. Finger ,
H. Curtins ,
A. Shah  and
J. Bauman
Kshem Prasad
Affiliation:
Institute of Microtechnology, Rue Breguet 2, CH- 2000 Neuchatel, Switzerland
F. Finger
Affiliation:
Institute of Microtechnology, Rue Breguet 2, CH- 2000 Neuchatel, Switzerland
H. Curtins
Affiliation:
Institute of Microtechnology, Rue Breguet 2, CH- 2000 Neuchatel, Switzerland
A. Shah
Affiliation:
Institute of Microtechnology, Rue Breguet 2, CH- 2000 Neuchatel, Switzerland
J. Bauman
Affiliation:
Physics Institute, University of Konstanz, D-7750 Konstanz, W. Germany
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Abstract

We report on the preparation and characterization of phosphorus doped gc-Si:H films produced by the very high frequency glow discharge (VHF-GD) at a plasma excitation frequency of 70 MHz. We present a systematic study of the deposition parameters i.e. hydrogen dilution of silane, VHF power density, gas phase doping ratio and deposition temperature and their influences on the electrical and structural properties of the material. In contrast to 13.56 MHz GD the VHF plasma conditions favour microcrystalline formation at low power densities; the resulting conductivities are significantly higher than those obtained at 13.56 MHz.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 164: Symposium H – Materials Issues in Microcrystalline Semiconductors , 1989 , 27
Copyright
Copyright © Materials Research Society 1990

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References

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