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Preparation and Characterization of Epitaxial KNBO3 Thin Films by a Sol-Gel Method

Published online by Cambridge University Press:  21 February 2011

Hidehiro Endo  and
M. J. Cima
Hidehiro Endo
Affiliation:
Advanced Materials & Technology Research Laboratories, Nippon Steel Corp., 1618 Ida, Nakahara-ku, Kawasaki 211, JAPAN
M. J. Cima
Affiliation:
Department of Materials Science & Engineering, Massachusetts Institute of Technology, 77 Massachusetts Ave., Cambridge, MA 02139
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Abstract

Epitaxial formation of KNbO3 films on several substrates was examined. The films were prepared by a sol-gel process using potassium ethoxide and niobium pentaethoxide. Hetero-epitaxial KNbO3 films with (100) orientation were successfully obtained both on MgO (100) and SrTiO3 (100) substrates by heat treatments above 700°C, while polycrystalline KNbO3 were formed on Si (111) substrates. Higher temperatures and extended soaking time promoted the grain growth of KNbO3 and KNbO3 films with improved surface morphologies (smoother surfaces) could be obtained by controlling heat treatment parameters.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 310: Symposium N – Ferroelectric Thin Films III , 1993 , 325
Copyright
Copyright © Materials Research Society 1993

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