Hostname: page-component-586b7cd67f-t7czq Total loading time: 0 Render date: 2024-11-23T11:10:10.640Z Has data issue: false hasContentIssue false
  • English
  • Français

Preparation and characterization of (Ba,Sr)TiO3 thin films by liquid source chemical vapor deposition

Published online by Cambridge University Press:  21 March 2011

Cheol-Hoon Yang ,
Young-Ki Han ,
Dong-Hyun Kim ,
Geun-Jo Han ,
Doo-Young Yang ,
Ki-Young Oh ,
Juho Song ,
Jaehoo Park  and
Cheol-Seong Hwang
Cheol-Hoon Yang
Affiliation:
JuSung Engineering Co., #49, Neungpyeong-Ri, Opo-Myeun, Kwangju-Si, Kyunggi-Do, 464-890, South Korea
Young-Ki Han
Affiliation:
JuSung Engineering Co., #49, Neungpyeong-Ri, Opo-Myeun, Kwangju-Si, Kyunggi-Do, 464-890, South Korea
Dong-Hyun Kim
Affiliation:
JuSung Engineering Co., #49, Neungpyeong-Ri, Opo-Myeun, Kwangju-Si, Kyunggi-Do, 464-890, South Korea
Geun-Jo Han
Affiliation:
JuSung Engineering Co., #49, Neungpyeong-Ri, Opo-Myeun, Kwangju-Si, Kyunggi-Do, 464-890, South Korea
Doo-Young Yang
Affiliation:
JuSung Engineering Co., #49, Neungpyeong-Ri, Opo-Myeun, Kwangju-Si, Kyunggi-Do, 464-890, South Korea
Ki-Young Oh
Affiliation:
JuSung Engineering Co., #49, Neungpyeong-Ri, Opo-Myeun, Kwangju-Si, Kyunggi-Do, 464-890, South Korea
Juho Song
Affiliation:
JuSung Engineering Co., #49, Neungpyeong-Ri, Opo-Myeun, Kwangju-Si, Kyunggi-Do, 464-890, South Korea
Jaehoo Park
Affiliation:
School of Material Science and Engineering, Seoul National University, San #56-1, Shillim-dong, Kwanak-ku, Seoul, 151-742, South Korea
Cheol-Seong Hwang
Affiliation:
School of Material Science and Engineering, Seoul National University, San #56-1, Shillim-dong, Kwanak-ku, Seoul, 151-742, South Korea
Get access

Abstract

The cocktail source of BST was prepared by mixing of Ba, Sr, and Ti precursor solution with specific mole ratio. This cocktail source was vaporized and delivered into the warm wall reactor by liquid delivery system(LDS) and gaseous source was distributed by simple structure of gas injector instead of showerhead system. The thickness uniformity of BST on 8 inch wafers were less than 3%. The Ti composition uniformity of our films were less than the 1 at%(1σ ) at stoichiometric and near stoichiometric. Their dielectric constant was about 230 and leakage current density was lower than 10-8 A/cm2 under ±1V bias. Excellent step coverage and smooth (haze-free) surface morphology of BST films were obtained by a deposition using a noble dome type reactor. The merit of our warm wall type reactor also will be explained by excellent step coverage and the uniform composition with 3 dimensional structure. Our achievement should be applicable to the capacitor of next generation DRAM.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 672: Symposium O – Mechanisms of Surface and Microstructure Evolution in Deposited Films and Film Structures , 2001 , O9.2
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Azuma, M.et al.,”A 64 Mb Ferroelectric DRAM Cell,” IEDM Conf. (1992).Google Scholar
2. Bilodeau, S. M., Carl, R., Buskirk, P. C. Van, Roeder, J. F., Basceri, Cem, Larsh, S. E., Parker, C. B., Streiffer, S. K. and Kingon, A. I., J. of the Korean Physical Society 32, pp. S1591–S1594 (1998)Google Scholar
3. Horikawa, T., Mikami, N., Ito, H., Ohno, Y., Makita, T. and Sato, K., IEICE Trans. Electron E77–c, 385 (1994)Google Scholar
4. Sone, S., Yabuta, H., Kato, Y., Iizuka, T., Yamamichi, S., Yamaguchi, H., Lesaicherre, P. Y., Nishimoto, S. and Yoshida, M., Jpn. J. Appl. Phys. 35, 5089 (1996)Google Scholar
5. Lesaicherre, P. Y., Yamaguchi, H., Miyasaka, Y., Watanabe, H., Ono, H. and Yoshida, M., Integr. Ferroelectrics 8, 201 (1995)Google Scholar
6. Buskirk, P. C. Van, Bilodeau, S. M., Roeder, J. F. and Kirlin, P. S., Jpn. J. Appl. Phys. 35, 2520 (1996)Google Scholar
7. Gardiner, R., Brown, D. W., Kirlin, P. S., and Rheingold, A. L., Chem. Mater. 3, 1053 (1991)Google Scholar
8. Hwang, C. S., Park, J.. Yang, D. Y., Yang, C. H., Kim, D. H., Han, Y. K., Oh, K. G. and Hwang, C. J., Integ. Ferroelect. 30, 37 (2000)Google Scholar
9. Park, J. and Hwang, C. S., International workshop on advanced LSI's and devices, p. 282 (1999)Google Scholar