Hostname: page-component-586b7cd67f-t7fkt Total loading time: 0 Render date: 2024-11-23T16:13:51.171Z Has data issue: false hasContentIssue false
  • English
  • Français

Preparation and Characterization of Ba and Nb Substituted SrBi2Ta2O9 Compounds

Published online by Cambridge University Press:  21 March 2011

Rasmi R. Das ,
P. S. Dobal ,
A. Dixit ,
W. Perez ,
M.S. Tomar ,
R. E. Melgarejo  and
Ram S. Katiyar
Rasmi R. Das
Affiliation:
Department of Physics, University of Puerto Rico, San Juan PR 00931-3343
P. S. Dobal
Affiliation:
Department of Physics, University of Puerto Rico, San Juan PR 00931-3343
A. Dixit
Affiliation:
Department of Physics, University of Puerto Rico, San Juan PR 00931-3343
W. Perez
Affiliation:
Department of Physics, University of Puerto Rico, San Juan PR 00931-3343
M.S. Tomar
Affiliation:
Department of Physics, University of Puerto Rico, Mayaguez PR 00681
R. E. Melgarejo
Affiliation:
Department of Physics, University of Puerto Rico, Mayaguez PR 00681
Ram S. Katiyar
Affiliation:
Department of Physics, University of Puerto Rico, San Juan PR 00931-3343
Get access

Abstract

Bi-layered ferroelectric compounds are considered most promising for non-volatile memory applications due to their high fatigue endurance. We have prepared SrBi2Ta2O9 powders with Ba (A sites) and Nb (B sites) substitutions using a novel solution based route. The powders were pressed and sintered at 1050°C to obtain high quality targets. Thin films were prepared using these ceramic targets on Pt/TiO2/SiO2/Si substrates using pulsed laser deposition (PLD) technique. The effects of growth conditions on phase formation as well as structural and electrical properties in films are studied. Initial results on films show good hysteretic characteristics. Though phase formation begins at much lower temperature, these films crystallize in a complete layered perovskite phase when prepared at 700°C. Optical phonon modes in these materials exhibit systematic variations with changing compositions. The changes in the Raman spectra are explained in terms of Ba and Nb substitutions at A and B sites, respectively. The temperature dependence of Raman spectra exhibits the substitution induced changes in the transition temperatures of these materials.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 655 , 2000 , CC5.6.1
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Scott, J.F. and Araujo, C.A. Paz de, Science 246, 1400, (1989).Google Scholar
2. Scott, J.F., Ferroelectrics Review, 1, 1, (1998).Google Scholar
3. Watton, R., Integ. Ferroelec., 4, 175, (1994).Google Scholar
4. Kowk, C. K., Vijaya, D. P., Desu, S.B., Parikh, N. R. and Hilll, E.A., Integ. Ferroelec., 3, 121, (1993).Google Scholar
5. Bhattacharyya, S., Bharadwaja, S.S.N., and Krupanidhi, S.B., Appl. Phys. Lett.,75, 2656 (1999).Google Scholar
6. Subbarao, E.C., J. Phys. Chem. Solids, 23, 665, (1962).Google Scholar
7. Shimakawa, Y., Kubo, Y., Nakagawa, Y., Goto, S., Kamiyama, T., Asano, H. and Izumi, F., Phys. Rev., B 61, 6559, (2000).10.1103/PhysRevB.61.6559Google Scholar
8. Shimakawa, Y. and Kubo, Y., Nakagawa, Y., Kamiyama, T., Asano, H. and Izumi, F.., Appl. Phys. Lett., 74, 1904, (1999).Google Scholar
9. Melgarejo, R.E., Tomar, M.S., Dobal, P.S. and Katiyar, R.S., J. Mater. Res., 15, 1661, (2000).Google Scholar