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Preparation and Characterisation of (ZnTe)x(CdSe)1−x Single Crystals

Published online by Cambridge University Press:  21 February 2011

V.K. Madhu Smitha Rani
Affiliation:
Department of Physics, S.V.University College, Tirupati 517 502, India
R.P. Vijayalakshmi
Affiliation:
Department of Physics, S.V.University College, Tirupati 517 502, India
D. Raja Reddy
Affiliation:
Department of Physics, S.V.University College, Tirupati 517 502, India
B.K. Reddy
Affiliation:
Department of Physics, S.V.University College, Tirupati 517 502, India
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Abstract

The titlematerial is one of the least studied among the II-VI alloy systems. So far it has not been possible to prepare ZnTe in n-type and CdSe in p-type with appreciable conductivities. Moreover ZnTe crystallises in zincblende whereas CdSe crystallises in wurtzite structure. Because of the varied nature of the end compounds, an attempt has been made to prepare single crystals of (ZnTe)x(CdSe)1−x in the entire range of ‘x’. The alloy material in the entire range Xof composition in the single crystalline form was grown by a modified Piper-Plich method. The grown crystals of this alloy system have been subjected to chemical analysis. DTA and DTG studies carried out on these alloys did not show any phasec transitions. However two exothermic peaks associated with increase in mass were noticed. This has been attributed to oxidation effects of Se/Te or Cd/Zn. XRD data though showed some regularity near end compositions there is still some ambiguity for the middle compositions. Energy gap obtained from reflection spectra and also photocurrent spectral response showed bowing. However, there is a marked different feature at one of the end regions. The growth and the results of all the above mentioned investigations are presented and discussed in this paper.

Type
Research Article
Copyright
Copyright © Materials Research Society 1990

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References

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