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Preliminary Results on Large Area X-ray a-SiC:H Multilayer Detectors with Optically Addressed Readout

Published online by Cambridge University Press:  01 February 2011

Manuela Vieira ,
Yuri Vygranenko ,
Miguel Fernandes ,
Paula Louro ,
Pedro Sanguino ,
Alessandro Fantoni  and
Reinhard Schwarz
Manuela Vieira
Affiliation:
[email protected], ISEL, DEETC, Rua Conselheiro Emidio Navarro, Lisbon, 1949-014, Portugal, +351218317290, +351218317114
Yuri Vygranenko
Affiliation:
[email protected], ISEL, DEETC, Rua Conselheiro Emidio Navarro, Lisbon, 1949-014, Portugal
Miguel Fernandes
Affiliation:
[email protected], ISEL, DEETC, Rua Conselheiro Emidio Navarro, Lisbon, 1949-014, Portugal
Paula Louro
Affiliation:
[email protected], ISEL, DEETC, Rua Conselheiro Emidio Navarro, Lisbon, 1949-014, Portugal
Pedro Sanguino
Affiliation:
[email protected], ISEL, DEETC, Rua Conselheiro Emidio Navarro, Lisbon, 1949-014, Portugal
Alessandro Fantoni
Affiliation:
[email protected], ISEL, DEETC, Rua Conselheiro Emidio Navarro, Lisbon, 1949-014, Portugal
Reinhard Schwarz
Affiliation:
[email protected], IST, Fisica, Lisbon, 1049-001, Portugal
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Abstract

This paper investigates a feasibility of using a large area image sensor with an optically addressed readout for medical X-ray diagnostic imaging. A device prototype comprises a multilayer glass/ZnO:Al/p (a-SiC:H)/i (a-Si:H)/ n (a-SiC:H)/ i(a-Si:H)/p (a-SiC:H)/ a SiNx/ITO structure coupled to a scintillator layer. Here, the p-i-n-i-p structure works in both sensing and switching modes depending on the biasing conditions. A numerical simulation is used to optimize the semiconductor layer thicknesses in order to achieve a photocurrent matching between back-to-back diodes in switching mode. The charge carrier transport within the p-i-n-i-p structure is also analyzed under different electric and optical biasing conditions. A physical model supports the results.

Keywords

sensorplasma-enhanced CVD (PECVD) (deposition)simulation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 989: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology-2007 , 2007 , 0989-A19-02
Copyright
Copyright © Materials Research Society 2007

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References

1 Street, R. A. (Ed.), in Technology and Applications of Amorphous Silicon (Springer, Berlin, 2000) pp.147–221.Google Scholar
21. Beutel, J., and Kundel, H. L., Handbook of Medical Imaging, SPIE Press, 2000.Google Scholar
3 Rong, Xiujiang J. et al. Med. Phys. 28 (11) 2328 (2001).Google Scholar
4 Moy, J.-P., Nuclear Instruments and Methods in Physics Research, A 442, (2000) 26.Google Scholar
5 Vieira, M., Fernandes, M., Louro, P., Schwarz, R., Schubert, M., J. Non-Cryst. Solids, 299-302 (2002) 1245 Google Scholar
6 Vygranenko, Y., Louro, P., Vieira, M., Chang, J., and Nathan, A., J. Non-Cryst. Solids, 352 (2006)1837.Google Scholar
7 Fernandes, M., Vieira, M. and Martins, R., Sensors and Actuators A-Physical, 115 (2004) 357.Google Scholar
8 http://www.cneu.psu.edu/amps/default.htm.Google Scholar