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Preliminary Characterization of GaN MBE Epitaxial Layers Grown on Nanoporous 6H-SiC Substrates

Published online by Cambridge University Press:  17 March 2011

J. T. Wolan ,
A. Gopalkrishna ,
S. E. Saddow ,
M. Mynbaeu ,
H. Morkoç ,
M. Reshchikov ,
F. Yun ,
V. Dmitriev  and
C.E.C. Wood
J. T. Wolan
Affiliation:
Dave C. Swalm School of Chemical Engineering, Mississippi State, MS 39762-9595
A. Gopalkrishna
Affiliation:
Dave C. Swalm School of Chemical Engineering, Mississippi State, MS 39762-9595
S. E. Saddow
Affiliation:
Emerging Materials Research Laboratory, Department of Electrical & Computer Engineering, Mississippi State, MS 39762-9571
H. Morkoç
Affiliation:
Virginia Commonwealth University, Department of Electrical Engineering
M. Reshchikov
Affiliation:
Virginia Commonwealth University, Department of Electrical Engineering
F. Yun
Affiliation:
Virginia Commonwealth University, Department of Electrical Engineering
V. Dmitriev
Affiliation:
TDI, Inc., Gaithersburg, MD, 20877
C.E.C. Wood
Affiliation:
Office of Naval Research Arlington, VA
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Abstract

We report on the growth and quality of plasma enhanced molecular beam epitaxy (PEMBE) of an n-GaN layer grown on a 6H-SiC substrate, which was prepared to be half nanoporous. A layer of nanoporous SiC was fabricated on a half section of n-type, on-axis (0001)Si face 41 mm commercial wafer by surface anodization. Following H-plasma surface cleaning and in-situ thermal annealing, a 0.7µm thick silicon doped GaN film was deposited at a growth rate of 0.35µm/hr. Substrate temperature during GaN growth was 709oC with a chamber pressure of 1.9 × 10−5Torr. Results of X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) characterization suggest improved chemical quality of the film grown on the nanoporous section. Photoluminescence (PL) data indicate greatly reduced nonradiative recombination in the epi layer grown on the nanoporous as compared to the control surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G11.41
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

[1] Morkoç, H., “Nitride Semiconductors and Devices,” Springer Verlag, Heidelburg (1999).Google Scholar
[2] Mohammad, S. N. and Morkoç, H., Progress in Quantum Electronics 20, 361, (1996).Google Scholar
[3] Mohammad, S. N., Salvador, A., and Morkoç, H., Proc. IEEE 83, 1306, (1995).Google Scholar
[4] Morkoç, H., Strite, S., Gao, G. B., Lin, M.E., Sverdlov, B., and Burns, M., J. Appl. Phys. Reviews 76, 1363, (1994).Google Scholar
[5] Strite, S.T. and Morkoç, H., J. Vac. Sci. Technol. B10, 1237, (1992).Google Scholar
[6] Ambacher, O., J. Phys. D: Appl. Phys. 31, 2653, (1998).Google Scholar
[7] Pearton, S. J., Zolper, J. C., Shul, R. J., Ren, F., J. Appl. Phys. 86, 1, (1999).Google Scholar
[8] Shiojima, K., J. Vac. Sci. Technol. B 18 (1), 37 (2000); L. T. Romano, B. S. Krusor, R. J. Molnar, Appl. Phys.Lett. 71, 2283 (1997).Google Scholar
[9] Pensl, G., Morkoc, H., Monemar, B., and Janzen, E. (Editors), Proc. 7th int. conf. on SiC, III-nitridees and related materials, Trans Tech Publications, Enfield (USA).Google Scholar
[10] Capano, M.A. and Trew, R.J. (Editors) Mat. Res. Soc. Bulletin, 22 (3), pp. 19–56, (1997).Google Scholar
[11] Pankove, J.I. and Moustakas, T.D. (Editors), Semiconductors and Semimetals, Vol. 50 Gallium Nitride (GaN) I, Academic Press, New York (1997).Google Scholar
[12] Pankove, J.I. and Moustakas, T.D. (Editors), Semiconductors and Semimetals, Vol. 57 Gallium Nitride (GaN) II, Academic Press, New York (1998).Google Scholar
[13] Binari, S., Redwing, J.M., Kelner, G., and Kruppa, W., “AlGaN/GaN HEMTs Grown on SiC Substrates,” Electron. Lett. 33, 242–243, 1997;Google Scholar
[14] Sheppard, S. T., Doverspike, K., Pribble, W. L., Allen, S. T., Palmour, J. W., Kehias, L. T. and Jenkins, T. J., “High Power Microwave GaN/AlGaN HEMTs on Semi-insulating Silicon Carbide Substrates,” IEEE Electron. Dev. Lett., 20, 161, (1999).Google Scholar
[15] Mynbaeva, M., Saddow, S.E., Melnychuk, G., Nikitina, I., Scheglov, M., Sitnikova, A., Kuznetsov, N., Zubrilov, A., Mynbaev, K., Seredova, N., and Dmitriev, V., To be published in Appl. Phys. Lett., 18 Jan 2001.Google Scholar
[16] HandBook of X-ray Photoelcron Spectroscopy, Moulder, J.F. et.al., eds. Perkin-Elmer Corp. Physical Electronics (1992).Google Scholar
[17] Hoflund, G.B., in Handbook of Surface and Interface Analysis: Methods in Problem Solving, eds. Riviere, J.C. and Myhra, S. (Marcel Dakker, New York, N.Y., 1998) p. 57.Google Scholar
[18] Wolan, J.T., Mount, C.K. and Hoflund, G.B., JVST, A 15, (1997) 2502.Google Scholar
[19] Wolan, J.T., Epling, W.S. and Hoflund, G.B., J. Appl. Phys. 81, (1997) 6160.Google Scholar
[20] Wolan, J.T. and Hoflund, G.B., JVST, A 16 (1998) 2546.Google Scholar