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Preferred Crystal Orientation and its Effect on the Magnetization Reversal Property of CoCrTa Thin Films

Published online by Cambridge University Press:  15 February 2011

T. Yeh
Affiliation:
Solid State Electronics Center, Honeywell Inc., Plymouth, MN 55441
G. Wang
Affiliation:
University of Minnesota, Minneapolis, MN 55455, U.S.A.
J. C. Lin
Affiliation:
Industrial Technology Research Instutite, Materials Research Laboratories, Taiwan, R.O.C.
J. M. Sivertsen
Affiliation:
University of Minnesota, Minneapolis, MN 55455, U.S.A.
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Abstract

CoCrTa thin films with c-axis predominatly oriented perpendicular to the plane of the film were obtained by sputter deposition on thin tantalum nitride underlayers with −75 volts substrate bias applied during the deposition of the film. The relationship between the distribution of c-axes preferred crystal orientation and magnetization reversal properties of the sputtered CoCrTa films was investigated. Higher coercivities are obtained for CoCrTa films having a more random crystal orientation distribution of hcp c-axes in polycrystal films, while lower coercivity is obtained for the highly oriented films. Such behavior may be attributed to the form of the induced local energy fluctuations associated with the crystal orientation distributions.

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

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