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Predominant Scattering Mechanism in Transparent Conductive Oxide Films

Published online by Cambridge University Press:  21 March 2011

Chen Meng ,
Pei Zhiliang ,
Wang Xi ,
Sun Cao  and
Wen Lishi
Chen Meng
Affiliation:
(Ion Beam Laboratory, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai, China, 200050, e-mail [email protected], fax 086-021-62513510) (Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China, 110015)
Pei Zhiliang
Affiliation:
(Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China, 110015)
Wang Xi
Affiliation:
(Ion Beam Laboratory, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai, China, 200050, e-mail [email protected], fax 086-021-62513510)
Sun Cao
Affiliation:
(Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China, 110015)
Wen Lishi
Affiliation:
(Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China, 110015)
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Abstract

Contributions of acoustical deformation scattering, ion impurity scattering and grain boundary potential scattering to the conductivity of TCO films have been calculated to discuss the predominant scattering mechanism, regardless of precise details of the preparation procedure. The results indicate that the effective mass of charge carriers has a strong dependence on carrier concentration. Based on the effective mass correction, as well as the carrier concentration-ionized impurity centers correction, scattering due to ion impurity has been developed to explain the upper limit of mobility or the lower limit of resistivity of TCO films. Two empirical expressions are introduced to depict the dependence of the upper limit of mobility and the lower limit of resistivity of TCO films on carrier concentration.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 666: Symposium F – Transport and Microstructural Phenomena , 2001 , F2.3
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1. Kim, J.S., Granström, M., Friend, R.H., Johansson, N., Salaneck, W.R., Daik, R., Feast, W.J., Cacialli, F., J. Appl. Phys. 84, 6859 (1998)Google Scholar
2. Tahar, R.B.H., Ban, T., Ohya, Y., Takahashi, Y., J. Appl. Phys. 83, 2631 (1998)Google Scholar
3. Rakhshami, A.E., Makdisi, Y., Ramazaniyan, H.A., J. Appl. Phys. 83, 1049 (1998)Google Scholar
4. Jin, Z.C., Hamberg, I., Granqvist, C.G., J. Appl. Phys. 64, 5117 (1988)Google Scholar
5. Nath, P., Bunshah, R.F., Basol, B.M. and Staffsud, O.M., Thin Solid Films 72, 463 (1980)Google Scholar
6. Ray, S., Banerjee, R., Basu, N., Batabyal, A.K., and Barua, A.K., J. Appl. Phys. 54, 3497 (1983)Google Scholar
7. Chen, M., Ph.D thesis, Institute of Metal Research, Chinese Academy of Science, June, 1999.Google Scholar
8. Chen, M., Pei, Z.L., Wang, X., Yu, Y.H., Liu, X.H., Huang, R.F., Wen, L.S., J. Phys D: Applied Physics. 33, 2538 (2000)Google Scholar
9. Brooks, H., 1995 Advances in Electronics and Electron Physics Vol 78, ed Martin, L (New York: Academic) p 85 Google Scholar
10. Chen, M., Wang, X., Pei, Z.L., Sun, C., Wen, L.S., Appl. Surf. Sci. 158, 134 (2000)Google Scholar