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Predicting and Comparing Electromigration Failure for Different Test Structures

Published online by Cambridge University Press:  22 February 2011

D.D. Brown ,
M.A. Korhonen ,
P. Børgesen  and
C.-Y. Li
D.D. Brown
Affiliation:
Department of Materials Science & Engineering, Cornell University, Ithaca, NY, 14850
M.A. Korhonen
Affiliation:
Department of Materials Science & Engineering, Cornell University, Ithaca, NY, 14850
P. Børgesen
Affiliation:
Department of Materials Science & Engineering, Cornell University, Ithaca, NY, 14850
C.-Y. Li
Affiliation:
Department of Materials Science & Engineering, Cornell University, Ithaca, NY, 14850
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Abstract

Electromigration and stress migration are important reliability concerns in the semiconductor industry. Relative and absolute assessments of lifetimes generally rely on the accelerated testing of ‘standard’ test structures. However, the sensitivity to various important electromigration phenomena is found to depend strongly on the type of test structure. Two common structures for electromigration testing are (i) a long line with large pads at either end and (ii) a more realistic interconnect line with W-studs at the line end. The effects of (a) different flux divergences at the line end, (b) interfacial diffusion, and (c) Cu-depletion generally result in different lifetimes for the two types of test structures under the same testing conditions. In this paper, we compare void growth rates and mean times to failure for both types of test structure taking these effects into account. Our results are used to explain differences in MTF values reported in the literature for different test structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 338: Symposium – Materials Reliability in Microelectronics IV , 1994 , 435
Copyright
Copyright © Materials Research Society 1994

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References

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