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Precision Ion Milling of Layered, Multi-Element TEM Specimens with High Specimen Preparation Spatial Resolution

Published online by Cambridge University Press:  21 February 2011

Ron Anderson  and
John Benedict
Ron Anderson
Affiliation:
IBM, Department 13W, Building 630-E40, East Fishkill Facility, Hopewell Junction, NY 12533 USA
John Benedict
Affiliation:
IBM, Department 13W, Building 630-E40, East Fishkill Facility, Hopewell Junction, NY 12533 USA
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Extract

It is now a requirement in the semiconductor industry to prepare TEM specimens of pre-specified regions with a specimen preparation resolution exceeding 100nm. In other words, given the coordinates x, y, z of the location desired for TEM analysis, the TEM specimen preparation procedure must yield a thin TEM specimen containing the point x, y, z plus or minus 100nm. Preparation of failure analysis specimens in other fields of endeavor, such as: metallurgical, ceramic, composite material laboratories etc., have specimen preparation spatial resolution requirements below one micron in some cases with the likelihood that greater precision will be required in the future.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 254: Symposium W – Specimen Preparation for Transmission Electron Microscopy of Materials III , 1991 , 141
Copyright
Copyright © Materials Research Society 1992

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References

1. Bravman, J. C. and Sinclair, R.,J. Electr. Microsc. Tech., 1, 53 (1984) for a definitive treatment of the cross sectioning process.Google Scholar
2. Klepeis, S. J., et al., in Specimen Preparation for Transmission Electron Microscopy of Materials, ed. Bravman, , et al., Mater. Res. Soc. Proc. 115, Pittsburgh, PA USA p. 179, 1988.Google Scholar
3. Anderson, R. M., et al., Microscopy of Semiconducting Materials 1989, Proceedings of the Physics Conference held at Oxford University, 10–13 April 1989, ed. by Cullis, A. G. and Hutchison, J. L., Institute of Physics Conference Series Number 100, Bristol and New York, 1989.Google Scholar
4. Klepeis, S. J., et al., EMSA Proceedings ed. by Bailey, G.W., San Francisco Press, p. 712, 1989.Google Scholar
5. Benedict, J.P., et al., in International Symposium on Electron Microscopy ed. by Kuo, K. and Yao, J., World Scientific, 450, 1990.Google Scholar
6. Kirch, S. J., et al., EMSA Proceedings ed. by Bailey, G.W., San Francisco Press, p. 1108, 1991.Google Scholar
7. The diamond lapping films we use are a 3M product series that have been assigned a special series of 3M order numbers at our request. The 30 micron film is order number: 3M-8-IDLF-NTB-NPSA-30-3T. This translates as: 8-inch, Imperial Diamond Lapping Film, Non Type “B”, Non Pressure Sensitive Adhesive, 30 micron grit, 3 mils Thick. The other grit sizes are ordered by substituting the desired grit size for the “30”, above.Google Scholar
8. Barna, A., EUREM Proceedings, Vol.1, Budapest, 1984.Google Scholar
9. Kim, M. J. and Carpenter, R. W., Ultramicrocopy, 21, 327, 1987.Google Scholar
10. Bahnck, D. and Hull, R., in Specimen Preparation for Transmission Electron Microscopy of Materials-II, ed. Anderson, Ron, Mater. Res. Soc. Proc. 199, Pittsburgh, PA USA p. 253.Google Scholar
11. GATAN, Inc., 6678 Owens Drive, Pleasanton, CA 94588.Google Scholar
12. BAL-TEC Products, Inc., 984 Southford Road, Box 1221, Middlebury, CT 06762.Google Scholar
13. Barna, A. and Barna, P. B., Proceedings Third Congress on Electron Microscopy, Athens, 1989.Google Scholar