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Precipitate Drifting and Coarsening Caused by Interface Electromigration

Published online by Cambridge University Press:  22 February 2011

Qing Ma  and
Z. Suo
Qing Ma
Affiliation:
Materials Department, University of California, Santa Barbara, CA 93106
Z. Suo
Affiliation:
Materials Department, University of California, Santa Barbara, CA 93106
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Abstract

A mechanism is proposed to explain electromigration-enhanced precipitate coarsening in Al-Cu alloy interconnects. The interface between the α-phase matrix and a θ-phase Al2Cu precipitate is incoherent, along which both Al and Cu atoms diffuse under an applied electric field. Depending on the relative mobility of Al and Cu, the diffusion causes the precipitate to migrate towards either the positive or the negative electrode. The velocity of a spherical precipitate is proportional to the electric field and the mobilities and inversely proportional to its radius. A critical electric field or precipitate radius exists, above which the precipitate can penetrate a grain boundary. Consequently, the precipitates agglomerate by the synergism between the surface tension-induced ripening and the current-induced migration. The resulting particles are distantly separated, depleting Cu atoms from the rest of the interconnect. The mechanism appears to limit the lifetime of interconnects having bamboo-like grains, tested below 300°C, less than half of the melting temperature of Al.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 338: Symposium – Materials Reliability in Microelectronics IV , 1994 , 391
Copyright
Copyright © Materials Research Society 1994

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References

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