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Pre-Annealing of TiN Barriers in Al Metallization of Silicon

Published online by Cambridge University Press:  26 February 2011

W. Sinke ,
P. K. Stout  and
F. W. Saris
W. Sinke
Affiliation:
FOM-Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, The Netherlands
P. K. Stout
Affiliation:
FOM-Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, The Netherlands
F. W. Saris
Affiliation:
FOM-Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, The Netherlands
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Abstract

We have studied the influence of a high-temperature pre-anneal on the barrier performance of TiN in Al metallization of Si. The results show that barrier failure is shifted towards a higher temperature by 20°C-40°C when the barrier is pre-annealed at 600°C-800°C. In addition, we studied the failure mechanism and found that the barrier breaks down by compound formation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 37: Symposium D – Layered Structures, Epitaxy, and Interfaces , 1984 , 623
Copyright
Copyright © Materials Research Society 1985

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