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Preamorphization-induced defects in shallow P+N junctions characterized by an ac magnetic field

Published online by Cambridge University Press:  01 February 2011

M. Abdelaoui ,
H. Mehor ,
M. Idrissi ,
M. Benzohra  and
F. Olivié
M. Abdelaoui
Affiliation:
Laboratoire Electronique Microtechnologie et Instrumentation, LEMI, UPRES EA 2654, Université de Rouen, 76821 Mont Saint Aignan, France.
H. Mehor
Affiliation:
Laboratoire Electronique Microtechnologie et Instrumentation, LEMI, UPRES EA 2654, Université de Rouen, 76821 Mont Saint Aignan, France.
M. Idrissi
Affiliation:
Laboratoire Electronique Microtechnologie et Instrumentation, LEMI, UPRES EA 2654, Université de Rouen, 76821 Mont Saint Aignan, France.
M. Benzohra
Affiliation:
Laboratoire Electronique Microtechnologie et Instrumentation, LEMI, UPRES EA 2654, Université de Rouen, 76821 Mont Saint Aignan, France.
F. Olivié
Affiliation:
Laboratoire d'Analyse et d'Architecture des Systèmes, LAAS-CNRS, 7, avenue du Colonel Roche, 31077 Toulouse, France.
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Abstract

Germanium implantation into silicon substrate is currently used to preamorphisize the crystalline structure in order to avoid boron channeling effects in shallow P+N junction manufacturing. Nevertheless, after boron doping and rapid thermal annealing, different defects are formed within the structure, such as end of range defects which are created at the amorphous/crystalline interface. Our study concerns two types of shallow P+N junctions. These junctions were fabricated using low energy boron implantation at 3 KeV with a dose of 2×1015 cm-2 into high-energy germanium preamorphized n-type crystalline silicon substrates at 2.2 MeV with a dose of 1015 cm-2. In the first type, the preamorphization was performed at ambient temperature. In the second, the preamorphization was performed at liquid nitrogen temperature. Boron doping was followed by a Rapid Thermal Annealing (RTA) step for 15 s at 950 °C. Deep Level Transient Spectroscopy (DLTS) technique was used to characterize the defects formed in each structure. The impact of an ac magnetic field on the reverse current has been studied at a given bias, when sweeping the sample temperature. The measurements were performed under a low frequency (less than 1 kHz) magnetic field of a Vrms value of 2000 G, with sample temperature varying between 80 and 260 K. The results show a high activity of defects at low frequencies (1 and 10 Hz) for the nitrogen preamorphized sample. Moreover, this activity is observed at about 200 K which corresponds to the peak of the DLTS spectra of such sample. However, the ambient preamorphized sample characterized by a lower concentration of defects seems to be insensitive to the ac magnetic field. Therefore, it appears that the preamorphization-induced defects influence strongly the response of the junction to an applied ac magnetic field.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 792: Symposium R – Radiation Effects and Ion Beam Processing of Materials , 2003 , R9.31
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

[1] Pozzolo, V., Tenti, P., Fiori, F., Spiazzi, G., Buso, S., CPES Annual Seminar, Blacksburg, I10–I15 (2002).Google Scholar
[2] Ficheux, S., Lerasle, Y., Pretet, E., Corsi, C. and Klingler, M., 13th Int. Zurich Symposium & Technical Exhibition on EMC, Zurich, 413–418 (1999).Google Scholar
[3] Leeper, E. A. and Maurer, S., “Silencing the fields: a practical guide to reducing ac magnetic fields”, ed. Symmetry Books (2001).Google Scholar
[4] Liu, C. K., Chou, C. Y., IEEE Trans. on Electromagnetic Compatibility 37, no. 4, 589 (1995)Google Scholar
[5] Fiorri, F., Pozzolo, V., IEEE Trans. on Electromagnetic Compatibility 42, no. 2, 206 (2000)Google Scholar
[6] Liu, H. L., Gearhart, S. S., Booske, J. H. and Wang, W., J. Electron. Mater. 27, no. 9, 1027–1029 (1998).Google Scholar
[7] Haslar, V., Seidl, P., Hazdra, P., Gwilliam, R. and Sealy, B., Nuclear Instr. and Meth. B55, 569–572 (1992).Google Scholar
[8] Benzohra, M., Olivié, F., Idrissi-Benzohra, M., Ketata, K. and Ketata, M., Nuc. Instr. and Meth. B 187, 201–206 (2002).Google Scholar
[9] Czerwinski, A. et al., Nuc. Instr. And Meth. B 186, 166–170 (2002).Google Scholar
[10] Abdelaoui, M., Idrissi-Benzohra, M., Mehor, H., Benzohra, M. and Olivié, F., Microelectronics Journal 34, 1059–1066 (2003).Google Scholar
[11] Sze, S. M., “Physics of Semiconductor Devices”, ed. John Wiley & Sons, New York (1981).Google Scholar
[12] Abdelaoui, M., Lamine, M., Idrissi-Benzohra, M., Benzohra, M., Olivié, F. and Ketata, M., 14th Int. Conf. Microelectronics (IEEE), Beirut, Lebanon, 83–86 (2002).Google Scholar