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Pr4f occupancy and VB/CB band offsets of Pr2O3 at the interface to Si(001) and SiC(0001) surfaces

Published online by Cambridge University Press:  28 July 2011

Dieter Schmeißer  and
H.J. Muessig
Dieter Schmeißer
Affiliation:
Angewandte Physik - Sensorik, BTU Cottbus, Postfach 10 13 44, 03044 Cottbus, Germany ihp, Im Technologiepark 25, 15236 Frankfurt/Oder, Germany.
H.J. Muessig
Affiliation:
Angewandte Physik - Sensorik, BTU Cottbus, Postfach 10 13 44, 03044 Cottbus, Germany ihp, Im Technologiepark 25, 15236 Frankfurt/Oder, Germany.
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Abstract

Resonant photoelectron spectroscopy (PES) at the Pr4d and O1s absorption edges is used to study the electronic properties at the interface of epitaxial grown Pr2O3 on Si(001).

In the electronic structure of bulk Pr2O3 the valence band (VB) states are predominantly of Pr6s and O2p atomic parentage. The contribution of Pr4f states are identified from the strong increase the VB features at the Pr4d resonances. The data at the O1s edge are caused by Raman scattering and resonant Auger decay and reflect the existence of CT complexes. They are the consequence of mixed valency caused by ligand-to-Pr4f charge transfer states. The decrease of their intensity is attributed to an increase in covalent bandwidth between the Ligand (O2p, Si3p) and Pr4f states. The CT complexes originally localized now become broadened and form gap states which fill the gap towards a metallic density of states. The metallic phase may be hindered upon alloying with SiO2 or other oxides

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 811: Symposia D/E – Integration of Advanced Micro-and Nanelectronic Devices-Critical Issues and Solutions , 2004 , D6.7
Copyright
Copyright © Materials Research Society 2004

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