Crossref Citations
This article has been cited by the following publications. This list is generated based on data provided by
Crossref.
Jensen, K. F.
Merchant, T. P.
Cole, J. V.
Hebb, J. P.
Knutson, K. L.
and
Mihopoulos, T. G.
1996.
Advances in Rapid Thermal and Integrated Processing.
p.
265.
Timans, P. J.
1996.
Advances in Rapid Thermal and Integrated Processing.
p.
35.
Lee, Kuo-Chung
Chang, Hong-Yuan
and
Hwu, Jenn-Gwo
1997.
A New Temperature Compensation Method For Si Wafers In Rapid Thermal Processor Using Separated Si Rings As Susceptors.
MRS Proceedings,
Vol. 470,
Issue. ,
Kuo-Chung Lee
Hong-Yuan Chang
Hong Chang
Jenn-Gwo Hwu
and
Tzong-Shyan Wung
1999.
The effect of patterned susceptor on the thickness uniformity of rapid thermal oxides.
IEEE Transactions on Semiconductor Manufacturing,
Vol. 12,
Issue. 3,
p.
340.
Yin, C.P.
Hsiao, C.C.
and
Lin, T.F.
2000.
Improvement in wafer temperature uniformity and flow pattern in a lamp heated rapid thermal processor.
Journal of Crystal Growth,
Vol. 217,
Issue. 1-2,
p.
201.
Chao-Chi Hong
Chuang-Yuan Lee
Yuan-Long Hsieh
Chean-Chung Liu
Fong, I.-K.
and
Jenn-Gwo Hwu
2001.
Improvement in oxide thickness uniformity by repeated spike oxidation.
IEEE Transactions on Semiconductor Manufacturing,
Vol. 14,
Issue. 3,
p.
227.
Chao-Chi Hong
Yuh-Ren Yen
Jiann-Liang Su
and
Jenn-Gwo Hwu
2002.
Improvement in ultrathin rapid thermal oxide uniformity by the control of gas flow.
IEEE Transactions on Semiconductor Manufacturing,
Vol. 15,
Issue. 1,
p.
102.
Hong, Chao-Chi
Chen, Jenn-Long
and
Hwu, Jenn-Gwo
2002.
Improvement of oxide thickness uniformity by high then low O2 pressure oxidation in rapid thermal processing.
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films,
Vol. 20,
Issue. 2,
p.
544.
Nenyei, Z.
Niess, J.
Lerch, W.
Dietl, W.
Timans, P. J.
and
Pichler, P.
2006.
Pattern Effects with the Mask off....
p.
177.