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Post-Oxidation Enhanced Diffusion of Low-Energy Implanted Boron in Ultra-Shallow P+/N Junctions Formation

Published online by Cambridge University Press:  17 March 2011

D. Lenoble ,
A. Halimaoui  and
A. Grouillet
D. Lenoble
Affiliation:
France-Telecom R&D - CNET, 28 chemin du vieux chêne - 38243 Meylan -, France
A. Halimaoui
Affiliation:
France-Telecom R&D - CNET, 28 chemin du vieux chêne - 38243 Meylan -, France
A. Grouillet
Affiliation:
France-Telecom R&D - CNET, 28 chemin du vieux chêne - 38243 Meylan -, France
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Abstract

In this paper, we report for the first time the effect of sacrificial oxide (sacox) on the boron diffusion in ultra-shallow P+/N junctions. It is shown that the boron diffusivity is enhanced when low energy implantations are performed through sacrificial oxide. The various experimental data lead to conclude that the Post-Oxidation Enhanced Diffusion (POED) is due to a « mirror effect » seen by the Si interstitials incoming into the sacox layer. POED occurs even for sacox as thin as 1.5 nm. From a simple model, the reflection coefficient is estimated to be about 100 % for a 2.5 nm-thick sacox.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 610: Symposium B – Si Front End Processing - Physics & Technology..II , 2000 , B3.9
Copyright
Copyright © Materials Research Society 2000

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References

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