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Post Metal Etch Treatment for Submicron Applications

Published online by Cambridge University Press:  10 February 2011

Simon Gonzales
Affiliation:
New Technology Group, Motorola Inc., 2200 W. Broadway Rd., Mesa, Arizona 85202
Gordy Grivna
Affiliation:
New Technology Group, Motorola Inc., 2200 W. Broadway Rd., Mesa, Arizona 85202
Anda McAfee
Affiliation:
New Technology Group, Motorola Inc., 2200 W. Broadway Rd., Mesa, Arizona 85202
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Abstract

Corrosion control and passivation of post metal etch structures are critical for submicron applications and overall yield performance. This study focused on 0.6 micron metal line spaces and the development of a process utilizing an integrated metal etch, photoresist strip and passivation tool. Data collected to characterize the corrosion/passivation mechanism included: veil and photoresist strip chemistries, passivation steps, time delays, subsurface material versus veil formation and electrical and defectivity yield. A post metal etch process was tested and integrated into a manufacturing environment that has provided minimal line loss, complete removal of etch veils, robust corrosion control and substantial reduction of intermetal shorts.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

1. Sakuma, K., Yagi, S., Imai, K., Japan J. Appl. Phys. 33, 617619 (1994).CrossRefGoogle Scholar
2. Clayton, F.R., Beeson, S.A., Solid State Technology, Jul. 1993, 9397.Google Scholar
3. Ishida, T., Fujiwara, N., Yoneda, M., Nakamoto, K., Horie, K., Japan J. Appl. Phys., 31, 20452048 (1992).CrossRefGoogle Scholar
4. Pai, P. and Chin, C.H., Microelectronic Manufacturing and Testing, Feb. 1990, 37–39.Google Scholar
5. Gabriel, C. and Wallach, R. in 9th Symp., Plasma Proc., (Electrochem. Soc. Proc., Pennington, NJ, 1992.).Google Scholar
6. Thornton, J., Gonzales, S. and Quijada, J. in 1995 Proceedings, (Institute of Environmental Sci. Proc., Mount Prospect, IL, 1995) pp. 414420.Google Scholar
7. Savas, S., Dutton, D., Woods, B., Guerra, R. and Hammond, M., Solid State Technology, Oct.1996, 123–128.Google Scholar
8. Gebara, G., Mautz, K and Wootton, P. in 10th Symp.. Plasma Etch, (Electrochem. Soc. Proc. 94–20, Pennington, NJ, 1994) pp. 421427.Google Scholar
9. Gonzales, S., Quijada, J. and Grivna, G. in Microelectronic Device & Multilevel Interconnect Tech. II, (SPIE Proceedings 2875, Bellingham, WA, 1996) pp. 301311.CrossRefGoogle Scholar
10. Gabriel, C. and Wallach, R. in Proc of the Symposia on Reliability of Semiconductor Devices / Interconnections and Laser Processes for Microelectronic Applications Proc., (Electrochem. Soc. Proc., Pennington, NJ, 1992).Google Scholar
11. Brown, T.L., Lemay, H.E., Jr., Chemistry - The Central Science, 3rd ed. (Prentice-Hall, Inc., Englewood Cliffs, NJ, 1985), pp. 351.Google Scholar