In this paper we present a model of nonequilibrium point defect generation in the silicon substrate during solid state reactions of the surface suicides formation, resulting from the interaction between the substrate and the thin metal film. The model is based on the following principles. The local stress, which is appearing during each act of the suicide molecule (MexSiy) creation at the suicide - silicon interface, relaxes by the generation of ηv point defects. The point defect generation rate (m is the suicide growth rate) has been defined by the mininimization of the system free energy AG, which includes the enthalpy of chemical reaction ΔG the value of the relaxed elastic energy

μ is the silicon shear modulus, Ω = (xΩMe+yΩSi) is the combined volume of metal and silicon atoms with stoichiometric coefficients, ΔΩ = (ΩMexSiy - Ω), ΩV is the vacancy volume in the matrix; and the term ΔGd = ηVkTln(C/C0) which takes into account the energy of the solid solution of noninteracting point defects, where C° is an equilibrium vacancy concentration and C is the real vacancy concentration. The estimations show that there is not any essential thermodynamic force which may prevent stress relaxation for any reasonable point defect supersaturation. For this case point defect generation rate may be written as jV = m(ΔΩ/ΩV). For the reactions of the initial phase formation in the Me-Si structures the values of ΔG*el, ηV and jV have been calculated and it has been shown that vacancy concentration can reach the values of 1015 - 1016 cm-3 at the regions nearest to the interface even during initial low temperature stages of the Ni, Pt, Cr suicide formation with the metal atoms are predominant moving species.