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Position-Controlled InN Nano-dot Growth on Patterned Substrates by ECR-MBE

Published online by Cambridge University Press:  01 February 2011

Taihei Yamaguchi ,
Tsutomu Araki ,
Hiroyuki Naoi  and
Yasushi Nanishi
Taihei Yamaguchi
Affiliation:
[email protected], Ritsumeikan Univ., Dept. of Photonics, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577, Japan, Kusatsu, 525-8577, Japan
Tsutomu Araki
Affiliation:
[email protected], Ritsumeikan Univ., Dept. of Photonics, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577, Japan
Hiroyuki Naoi
Affiliation:
[email protected], Ritsumeikan Univ., Center for Promotion of The 21st Century COE Program, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577, Japan
Yasushi Nanishi
Affiliation:
[email protected], Ritsumeikan Univ., Dept. of Photonics, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577, Japan
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Abstract

We report on the growth of self-aligned InN nano-dots on nano-patterned GaN templates by electron cyclotron resonance plasma-excited molecular beam epitaxy (ECR-MBE). In the fabrication of the nano-dots, InN was grown on GaN templates with reticular patterns of holes, which were prepared by the focused ion beam (FIB) technique. The InN nano-dots were formed selectively at the holes, resulting in the reticular array of InN nano-dos. The size of InN dots was controlled by varying the hole-pitch and the growth temperature. Furthermore, the shape of InN dots improved by thermal annealing after the growth. We have succeeded in controlling the position and size of InN nano-dots on nano-patterned substrates. Typically, InN nano-dots with a diameter of 50 nm and a height of 10 nm were fabricated in 410°C growth.

Keywords

III-Vnanostructuremolecular beam epitaxy (MBE)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 955: Symposium I – Advances in III-V Nitride Semiconductor Materials and Devices , 2006 , 0955-I07-40
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

[1] Davydov, V. Yu., Klochikhin, A. A., Seisyan, R. P., Emtsev, V. V., Ivanov, S. V., Bechstedt, F., Furthmüller, J., Harima, H., Mudryi, A. V., Aderhold, J., Semchinova, O., and Graul, J., phys. stat. sol. (b) 229, R1 (2002).Google Scholar
[2] Matsuoka, T., Okamoto, H., Nakao, M., Harima, H., and Kurimoto, E., Appl. Phys. Lett. 81, 1246 (2002).Google Scholar
[3] Wu, J., Walukiewicz, W., Yu, K. M., Arger III, J. W., Haller, E. E., Lu, H., Schaff, W. J., Saito, Y., and Nanishi, Y., Appl. Phys. Lett. 80, 3967 (2002).Google Scholar
[4] Saito, Y., Harima, H., Kurimoto, E., Yamaguchi, T., Teraguchi, N., Suzuki, A., Araki, T., and Nanishi, Y., phys. stat. sol. (b) 234, 796 (2002).Google Scholar
[5] Nanishi, Y., Saito, Y., Yamaguchi, T., Matsuda, F., Araki, T., Naoi, H., Suzuki, A., Harima, H., and Miyajima, T., Mat. Res. Soc. Proc. 798, Y12.1 (2004).Google Scholar
[6] Walle, C. G. Van de and Neugebauer, J., Nature 423, 626 (2003).Google Scholar
[7] Briot, O., Maleyre, B., and Ruffenach, S., Appl. Phys. Lett. 83, 2919 (2003).Google Scholar
[8] Maleyre, B., briot, O., and Ruffenach, S., J. Cryst. Growth (c) 269, 15 (2004).Google Scholar
[9] Ruffenach, S., Maleyre, B., Briot, O., and Gil, B., Prog. Solid. State Chem. 2, 826 (2005).Google Scholar
[10] Lozano, J. G., Sanchez, A. M., Garcia, R., Gonzalez, D., Araujo, D., Ruffenach, S., and Briot, O., Appl. Phys. Lett. 87, 263104 (2005).Google Scholar
[11] Cao, Y. G., Xie, M. H., Liu, Y., Xu, S. H., Ng, Y. F., Wu, H. S., and Tong, S. Y., Appl. Phys. Lett. 83, 5157 (2003).Google Scholar
[12] Yoshikawa, A., Hashimoto, N., Kikukawa, N., Che, S. B., and Ishitani, Y., Appl. Phys. Lett. 86, 153115 (2005).Google Scholar
[13] Zhou, Lin, Xu, Tao, Smith, David J., and Moustakas, T. D., Appl. Phys. Lett. 88, 231906 (2006)Google Scholar
[14] Matsuda, F., Saito, Y., Muramatsu, T., Yamaguchi, T., Matsuo, Y., Koukitsu, A., Araki, T., and Nanishi, Y., phys. stat. sol. (c) 0, 2810 (2003).Google Scholar
[15] Xu, K. and Yoshikawa, A., Appl. Phys. Lett. 83, 251 (2003).Google Scholar
[16] Naoi, H., Matsuda, F., Araki, T., Suzuki, A., and Nanishi, Y., J. Cryst. Growth 269, 155 (2004).Google Scholar
[17] Koizumi, T., Wada, J., Araki, T., Naoi, H., and Nanishi, Y., J. Cryst. Growth 275, e1073 (2004).Google Scholar