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Porous Silicon Nanostructure Revealed By Electron Spin Resonance

Published online by Cambridge University Press:  25 February 2011

Y. Xiao ,
T.J. McMahon ,
J.I. Pankove  and
Y.S. Tsuo
Y. Xiao
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401-3393 Dept. of EECE, Univ. of Colorado, Boulder, CO 80309-0425
T.J. McMahon
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401-3393
J.I. Pankove
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401-3393 Dept. of EECE, Univ. of Colorado, Boulder, CO 80309-0425
Y.S. Tsuo
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401-3393
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Abstract

Electron spin resonance (ESR) study of annealed porous Si (PS) samples shows the existence of 20% to 30% of oxygen related Pbl (.Si-Si2O) centers, in addition to the Pb0 (·Si-Si3) centers already reported by other groups. The 29Si hyperfine and superhyperfine lines are well-defined at room temperature. We find that the nanostructure of PS, although twisted as appeared in scanning electron microscopy images, is well aligned with the underlying crystal lattice, and the ESR line broadening is mainly due to the local strain around the dangling bonds and not to the nanoscale column or particle misalignment.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 298: Symposium B – Silicon-Based Optoelectronic Materials , 1993 , 277
Copyright
Copyright © Materials Research Society 1993

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References

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